Toward highly radiative white light emitting nanostructures: A new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field

Je Hyung Kim, Young Ho Ko, Jong Hoi Cho, Su-Hyun Gong, Suk Min Ko, Yong Hoon Cho

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

White light emitting InGaN nanostructures hold a key position in future solid-state lighting applications. Although many suggested approaches to form group III-nitride vertical structures have been reported, more practical and cost effective methods are still needed. Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition. Without a patterning process, we successfully obtained high quality and polarization field minimized In-rich GaN/InGaN core-shell nanostructures. The various quantum well thicknesses and the multi-facets of the obelisk-shaped core-shell nanostructures provide a broad spectrum of the entire visible range without changing the InGaN growth temperature. Due to their high crystal quality and polarization field reduction, the core-shell InGaN quantum wells show an ultrafast radiative recombination time of less than 200 ps and uniformly high internal quantum efficiency in the broad spectral range. We also investigated the important role of polarization fields in the complex recombination dynamics in InGaN quantum wells.

Original languageEnglish
Pages (from-to)14213-14220
Number of pages8
JournalNanoscale
Volume6
Issue number23
DOIs
Publication statusPublished - 2014 Dec 7
Externally publishedYes

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Nanostructures
Polarization
Semiconductor quantum wells
Organic Chemicals
Organic chemicals
Growth temperature
Quantum efficiency
Nitrides
Chemical vapor deposition
Etching
Lighting
Metals
Vapors
Crystals
Costs

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Toward highly radiative white light emitting nanostructures : A new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field. / Kim, Je Hyung; Ko, Young Ho; Cho, Jong Hoi; Gong, Su-Hyun; Ko, Suk Min; Cho, Yong Hoon.

In: Nanoscale, Vol. 6, No. 23, 07.12.2014, p. 14213-14220.

Research output: Contribution to journalArticle

@article{0725a9ab469b4e76a4f0645f32839784,
title = "Toward highly radiative white light emitting nanostructures: A new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field",
abstract = "White light emitting InGaN nanostructures hold a key position in future solid-state lighting applications. Although many suggested approaches to form group III-nitride vertical structures have been reported, more practical and cost effective methods are still needed. Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition. Without a patterning process, we successfully obtained high quality and polarization field minimized In-rich GaN/InGaN core-shell nanostructures. The various quantum well thicknesses and the multi-facets of the obelisk-shaped core-shell nanostructures provide a broad spectrum of the entire visible range without changing the InGaN growth temperature. Due to their high crystal quality and polarization field reduction, the core-shell InGaN quantum wells show an ultrafast radiative recombination time of less than 200 ps and uniformly high internal quantum efficiency in the broad spectral range. We also investigated the important role of polarization fields in the complex recombination dynamics in InGaN quantum wells.",
author = "Kim, {Je Hyung} and Ko, {Young Ho} and Cho, {Jong Hoi} and Su-Hyun Gong and Ko, {Suk Min} and Cho, {Yong Hoon}",
year = "2014",
month = "12",
day = "7",
doi = "10.1039/c4nr03365e",
language = "English",
volume = "6",
pages = "14213--14220",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
number = "23",

}

TY - JOUR

T1 - Toward highly radiative white light emitting nanostructures

T2 - A new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field

AU - Kim, Je Hyung

AU - Ko, Young Ho

AU - Cho, Jong Hoi

AU - Gong, Su-Hyun

AU - Ko, Suk Min

AU - Cho, Yong Hoon

PY - 2014/12/7

Y1 - 2014/12/7

N2 - White light emitting InGaN nanostructures hold a key position in future solid-state lighting applications. Although many suggested approaches to form group III-nitride vertical structures have been reported, more practical and cost effective methods are still needed. Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition. Without a patterning process, we successfully obtained high quality and polarization field minimized In-rich GaN/InGaN core-shell nanostructures. The various quantum well thicknesses and the multi-facets of the obelisk-shaped core-shell nanostructures provide a broad spectrum of the entire visible range without changing the InGaN growth temperature. Due to their high crystal quality and polarization field reduction, the core-shell InGaN quantum wells show an ultrafast radiative recombination time of less than 200 ps and uniformly high internal quantum efficiency in the broad spectral range. We also investigated the important role of polarization fields in the complex recombination dynamics in InGaN quantum wells.

AB - White light emitting InGaN nanostructures hold a key position in future solid-state lighting applications. Although many suggested approaches to form group III-nitride vertical structures have been reported, more practical and cost effective methods are still needed. Here, we present a new approach to GaN/InGaN core-shell nanostructures at a wafer level formed by chemical vapor-phase etching and metal-organic chemical vapor deposition. Without a patterning process, we successfully obtained high quality and polarization field minimized In-rich GaN/InGaN core-shell nanostructures. The various quantum well thicknesses and the multi-facets of the obelisk-shaped core-shell nanostructures provide a broad spectrum of the entire visible range without changing the InGaN growth temperature. Due to their high crystal quality and polarization field reduction, the core-shell InGaN quantum wells show an ultrafast radiative recombination time of less than 200 ps and uniformly high internal quantum efficiency in the broad spectral range. We also investigated the important role of polarization fields in the complex recombination dynamics in InGaN quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=84908884328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908884328&partnerID=8YFLogxK

U2 - 10.1039/c4nr03365e

DO - 10.1039/c4nr03365e

M3 - Article

AN - SCOPUS:84908884328

VL - 6

SP - 14213

EP - 14220

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 23

ER -