Towards an accurate measurement of thermal contact resistance at chemical vapor deposition-grown graphene/SiO2 interface through null point scanning thermal microscopy

Jaehun Chung, Gwangseok Hwang, Hyeongkeun Kim, Wooseok Yang, Oh Myoung Kwon

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In the development of graphene-based electronic devices, it is crucial to characterize the thermal contact resistance between the graphene and the substrate precisely. In this study, we demonstrate that the thermal contact resistance between CVD-grown graphene and SiO2 substrate can be obtained by measuring the temperature drop occurring at the graphene/SiO2 interface with null point scanning thermal microscopy (NP SThM), which profiles the temperature distribution quantitatively with nanoscale spatial resolution (∼50 nm) without the shortcomings of the conventional SThM. The thermal contact resistance between the CVD-grown graphene and SiO2 substrate is measured as (1.7±0.27)×10-6 m2K/W. This abnormally large thermal contact resistance seems to be caused by extrinsic factors such as ripples and metal-based contamination, which inevitably form in CVD-grown graphene during the production and transfer processes.

Original languageEnglish
Pages (from-to)9077-9082
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number11
DOIs
Publication statusPublished - 2015 Nov 1

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Keywords

  • Graphene
  • Scanning null point microscopy
  • Scanning thermal microscopy
  • Temperature profiling
  • Thermal contact resistance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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