Abstract
Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO2/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 ω, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO2 and NH3 gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.
| Original language | English |
|---|---|
| Pages (from-to) | 27115-27121 |
| Number of pages | 7 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 40 |
| DOIs | |
| Publication status | Published - 2016 Oct 12 |
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Keywords
- chemical sensor
- graphene
- multilayer
- self-assembled monolayer
- transfer-free
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers. / Yang, Gwangseok; Kim, Hong Yeol; Jang, Soohwan; Kim, Ji Hyun.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 40, 12.10.2016, p. 27115-27121.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transfer-Free Growth of Multilayer Graphene Using Self-Assembled Monolayers
AU - Yang, Gwangseok
AU - Kim, Hong Yeol
AU - Jang, Soohwan
AU - Kim, Ji Hyun
PY - 2016/10/12
Y1 - 2016/10/12
N2 - Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO2/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 ω, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO2 and NH3 gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.
AB - Large-area graphene needs to be directly synthesized on the desired substrates without using a transfer process so that it can easily be used in industrial applications. However, the development of a direct method for graphene growth on an arbitrary substrate remains challenging. Here, we demonstrate a bottom-up and transfer-free growth method for preparing multilayer graphene using a self-assembled monolayer (trimethoxy phenylsilane) as the carbon source. Graphene was directly grown on various substrates such as SiO2/Si, quartz, GaN, and textured Si by a simple thermal annealing process employing catalytic metal encapsulation. To determine the optimal growth conditions, experimental parameters such as the choice of catalytic metal, growth temperatures, and gas flow rate were investigated. The optical transmittance at 550 nm and the sheet resistance of the prepared transfer-free graphene are 84.3% and 3500 ω, respectively. The synthesized graphene samples were fabricated into chemical sensors. High and fast responses to both NO2 and NH3 gas molecules were observed. The transfer-free graphene growth method proposed in this study is highly compatible with previously established fabrication systems, thereby opening up new possibilities for using graphene in versatile applications.
KW - chemical sensor
KW - graphene
KW - multilayer
KW - self-assembled monolayer
KW - transfer-free
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U2 - 10.1021/acsami.6b08974
DO - 10.1021/acsami.6b08974
M3 - Article
VL - 8
SP - 27115
EP - 27121
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 40
ER -