Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

Won Jun Kim, Pulak C. Debnath, Junsu Lee, Ju Han Lee, Dae-Soon Lim, Yong Won Song

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

Original languageEnglish
Article number365603
JournalNanotechnology
Volume24
Issue number36
DOIs
Publication statusPublished - 2013 Sep 13

Fingerprint

Laser mode locking
Graphite
Evaporators
Graphene
Multilayers
Lasers
Catalysts
Carbon
Optics and Photonics
Raman Spectrum Analysis
Substrates
Atmosphere
Photonics
Raman spectroscopy
Visualization
Impurities
Wavelength
Atoms

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking. / Kim, Won Jun; Debnath, Pulak C.; Lee, Junsu; Lee, Ju Han; Lim, Dae-Soon; Song, Yong Won.

In: Nanotechnology, Vol. 24, No. 36, 365603, 13.09.2013.

Research output: Contribution to journalArticle

@article{812c03de84384fb0960b66bca2171bbf,
title = "Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking",
abstract = "Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.",
author = "Kim, {Won Jun} and Debnath, {Pulak C.} and Junsu Lee and Lee, {Ju Han} and Dae-Soon Lim and Song, {Yong Won}",
year = "2013",
month = "9",
day = "13",
doi = "10.1088/0957-4484/24/36/365603",
language = "English",
volume = "24",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "36",

}

TY - JOUR

T1 - Transfer-free synthesis of multilayer graphene using a single-step process in an evaporator and formation confirmation by laser mode-locking

AU - Kim, Won Jun

AU - Debnath, Pulak C.

AU - Lee, Junsu

AU - Lee, Ju Han

AU - Lim, Dae-Soon

AU - Song, Yong Won

PY - 2013/9/13

Y1 - 2013/9/13

N2 - Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

AB - Multilayer graphene is synthesized by a simplified process employing an evaporator in which a target substrate is deposited with a Ni catalyst layer before being heated to grow graphene directly. Carbon atoms adsorbed onto the surface of the Ni source as impurities from the atmosphere are incorporated into the catalyst layer during the deposition, and diffuse toward the catalyst/substrate interface, where they crystallize as graphene with a thickness of less than 2 nm. The need for a transfer process and external carbon supply is eliminated. The graphene is characterized by conventional analysis approaches, including nano-scale visualization and Raman spectroscopy, and utilizing photonics, graphene-functionalized passive laser mode-locking is demonstrated to confirm the successful synthesis of the graphene layer, resulting in an operating center wavelength of 1569.4 nm, a pulse duration of 1.35 ps, and a repetition rate of 31.6 MHz.

UR - http://www.scopus.com/inward/record.url?scp=84882934156&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84882934156&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/24/36/365603

DO - 10.1088/0957-4484/24/36/365603

M3 - Article

C2 - 23942313

AN - SCOPUS:84882934156

VL - 24

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 36

M1 - 365603

ER -