Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices

Kunook Chung, Chul-Ho Lee, Gyu Chul Yi

Research output: Contribution to journalArticle

366 Citations (Scopus)

Abstract

We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic.

Original languageEnglish
Pages (from-to)655-657
Number of pages3
JournalScience
Volume330
Issue number6004
DOIs
Publication statusPublished - 2010 Oct 29
Externally publishedYes

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Equipment and Supplies
Light
Zinc Oxide
Lighting
Plastics
Glass
Metals
Temperature
gallium nitride

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  • General

Cite this

Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. / Chung, Kunook; Lee, Chul-Ho; Yi, Gyu Chul.

In: Science, Vol. 330, No. 6004, 29.10.2010, p. 655-657.

Research output: Contribution to journalArticle

Chung, Kunook ; Lee, Chul-Ho ; Yi, Gyu Chul. / Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. In: Science. 2010 ; Vol. 330, No. 6004. pp. 655-657.
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