Transistor design and application considerations for >200-GHz SiGe HBTs

Greg Freeman, Basanth Jagannathan, Shwu Jen Jeng, Jae-Sung Rieh, Andreas D. Stricker, David C. Ahlgren, Seshadri Subbanna

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56 Citations (Scopus)

Abstract

SiGe HBT transistors achieving over 200 GHz fT and fMAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

Original languageEnglish
Pages (from-to)645-655
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume50
Issue number3
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

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Keywords

  • BiCMOS integrated circuits
  • Bipolar transistors
  • Heterojunctions
  • Semiconductor devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Freeman, G., Jagannathan, B., Jeng, S. J., Rieh, J-S., Stricker, A. D., Ahlgren, D. C., & Subbanna, S. (2003). Transistor design and application considerations for >200-GHz SiGe HBTs. IEEE Transactions on Electron Devices, 50(3), 645-655. https://doi.org/10.1109/TED.2003.810467