Transistor design and application considerations for >200-GHz SiGe HBTs

Greg Freeman, Basanth Jagannathan, Shwu Jen Jeng, Jae-Sung Rieh, Andreas D. Stricker, David C. Ahlgren, Seshadri Subbanna

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

SiGe HBT transistors achieving over 200 GHz fT and fMAX are demonstrated in this paper. Techniques and trends in SiGe HBT design are discussed. Processing techniques available to silicon technologies are utilized to minimize parasitic resistances and capacitances and thereby establish raw speeds exceeding III-V devices despite the higher mobility in those materials. Higher current densities and greater avalanche currents, which are required for establishing such high performance, are discussed as they relate to device self-heating and reliability and the degradation of the devices. Simple circuit results are shown, demonstrating 4.2-ps ring-oscillator delays.

Original languageEnglish
Pages (from-to)645-655
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume50
Issue number3
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Transistors
transistors
Silicon
Capacitance
Current density
Heating
Degradation
avalanches
high current
Networks (circuits)
Processing
capacitance
oscillators
current density
degradation
trends
heating
rings
silicon

Keywords

  • BiCMOS integrated circuits
  • Bipolar transistors
  • Heterojunctions
  • Semiconductor devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Freeman, G., Jagannathan, B., Jeng, S. J., Rieh, J-S., Stricker, A. D., Ahlgren, D. C., & Subbanna, S. (2003). Transistor design and application considerations for >200-GHz SiGe HBTs. IEEE Transactions on Electron Devices, 50(3), 645-655. https://doi.org/10.1109/TED.2003.810467

Transistor design and application considerations for >200-GHz SiGe HBTs. / Freeman, Greg; Jagannathan, Basanth; Jeng, Shwu Jen; Rieh, Jae-Sung; Stricker, Andreas D.; Ahlgren, David C.; Subbanna, Seshadri.

In: IEEE Transactions on Electron Devices, Vol. 50, No. 3, 01.03.2003, p. 645-655.

Research output: Contribution to journalArticle

Freeman, G, Jagannathan, B, Jeng, SJ, Rieh, J-S, Stricker, AD, Ahlgren, DC & Subbanna, S 2003, 'Transistor design and application considerations for >200-GHz SiGe HBTs', IEEE Transactions on Electron Devices, vol. 50, no. 3, pp. 645-655. https://doi.org/10.1109/TED.2003.810467
Freeman, Greg ; Jagannathan, Basanth ; Jeng, Shwu Jen ; Rieh, Jae-Sung ; Stricker, Andreas D. ; Ahlgren, David C. ; Subbanna, Seshadri. / Transistor design and application considerations for >200-GHz SiGe HBTs. In: IEEE Transactions on Electron Devices. 2003 ; Vol. 50, No. 3. pp. 645-655.
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