Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

T. W. Kim, K. H. Yoo, Gil Ho Kim, S. Lee, J. K. Furdyna, M. Dobrowolska

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.

Original languageEnglish
Pages (from-to)191-195
Number of pages5
JournalSolid State Communications
Volume133
Issue number3
DOIs
Publication statusPublished - 2005 Jan

Keywords

  • A. Nanostructures
  • B. Epitaxy
  • D. Optical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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