Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

T. W. Kim; K. H. Yoo; Gil Ho Kim; S. Lee; J. K. Furdyna; M. Dobrowolska

doi:10.1016/j.ssc.2004.10.029

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

T. W. Kim, K. H. Yoo, Gil Ho Kim, S. Lee, J. K. Furdyna, M. Dobrowolska

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.

Original language	English
Pages (from-to)	191-195
Number of pages	5
Journal	Solid State Communications
Volume	133
Issue number	3
DOIs	https://doi.org/10.1016/j.ssc.2004.10.029
Publication status	Published - 2005 Jan

Keywords

A. Nanostructures
B. Epitaxy
D. Optical properties

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2004.10.029

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Cite this

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title = "Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays",

abstract = "Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.",

keywords = "A. Nanostructures, B. Epitaxy, D. Optical properties",

author = "Kim, {T. W.} and Yoo, {K. H.} and Kim, {Gil Ho} and S. Lee and Furdyna, {J. K.} and M. Dobrowolska",

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T1 - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays

AU - Kim, T. W.

AU - Yoo, K. H.

AU - Kim, Gil Ho

AU - Lee, S.

AU - Furdyna, J. K.

AU - Dobrowolska, M.

PY - 2005/1

Y1 - 2005/1

N2 - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.

AB - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.

KW - A. Nanostructures

KW - B. Epitaxy

KW - D. Optical properties

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