Abstract
Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 191-195 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 133 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2005 Jan 1 |
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Keywords
- A. Nanostructures
- B. Epitaxy
- D. Optical properties
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays. / Kim, T. W.; Yoo, K. H.; Kim, Gil Ho; Lee, Sang Hoon; Furdyna, J. K.; Dobrowolska, M.
In: Solid State Communications, Vol. 133, No. 3, 01.01.2005, p. 191-195.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe self-assembled quantum-dot arrays
AU - Kim, T. W.
AU - Yoo, K. H.
AU - Kim, Gil Ho
AU - Lee, Sang Hoon
AU - Furdyna, J. K.
AU - Dobrowolska, M.
PY - 2005/1/1
Y1 - 2005/1/1
N2 - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.
AB - Transition behavior from uncoupled to coupled multiple stacked CdSe/ZnSe quantum-dot (QD) arrays grown by molecular beam epitaxy were investigated. Transmission electron microscopy showed that vertically stacked self-assembled CdSe QD arrays were embedded in the ZnSe barriers. The results for the photoluminescence (PL) data at 18 K demonstrated clearly that the transition behavior from uncoupled to coupled peaks depended on the ZnSe barrier thickness. The temperature-dependent PL measurements showed that the activation energy of the electrons confined in the CdSe QDs increased dramatically with decreasing ZnSe spacer layer thickness due to the strong coupling between CdSe/ZnSe QD arrays. The present observations can help improve understanding of the dependence of the coupling behavior and activation energy in CdSe/ZnSe QDs on the spacer layer thickness.
KW - A. Nanostructures
KW - B. Epitaxy
KW - D. Optical properties
UR - http://www.scopus.com/inward/record.url?scp=10444244881&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=10444244881&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2004.10.029
DO - 10.1016/j.ssc.2004.10.029
M3 - Article
VL - 133
SP - 191
EP - 195
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 3
ER -