Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam

Dong Hun Lee, Tae Yeon Seong, Man Ho Cho, Chung Nam Whang

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Abstract

Y2O3 films were grown on SiO2-covered Si(111), and hydrogen-terminated Si(111) substrates at a temperature of 500°C by ultra-high vacuum ionized cluster beam deposition. The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high resolution transmission electron microscopy (HREM). The TED results show that the Y2O3 grown on the SiO2-Si has the epitaxial relationship of (11-1)Y(2)O(3)//(111)Si and [-110]Y(2)O(3)//[-110]Si. The film on the H-Si contains YSi2-x and amorphous YSixOy layers at the interface, having the orientation relationship each other. For the YSi2-x and the Si substrate, the relationship is (0001)YSi2-x//(111)Si and [1-210]YSi2-x//[-110]Si. For the Y2O3 and the YSi2-x, the relationship is as follows: (11-1)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x; (111)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x. The formation mechanism of the interfacial phases of SiOx, YSixOy, and YSi2-x are described. It is shown that the crystallinity of the Y2O3 film on the SiO2-Si(111) is better than that of Y2O3 on H-Si(111).

Original languageEnglish
Pages (from-to)3028-3031
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number8
DOIs
Publication statusPublished - 1999 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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