Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam

Dong Hun Lee, Tae Yeon Seong, Man Ho Cho, Chung Nam Whang

Research output: Contribution to journalArticle

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Abstract

Y2O3 films were grown on SiO2-covered Si(111), and hydrogen-terminated Si(111) substrates at a temperature of 500°C by ultra-high vacuum ionized cluster beam deposition. The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high resolution transmission electron microscopy (HREM). The TED results show that the Y2O3 grown on the SiO2-Si has the epitaxial relationship of (11-1)Y(2)O(3)//(111)Si and [-110]Y(2)O(3)//[-110]Si. The film on the H-Si contains YSi2-x and amorphous YSixOy layers at the interface, having the orientation relationship each other. For the YSi2-x and the Si substrate, the relationship is (0001)YSi2-x//(111)Si and [1-210]YSi2-x//[-110]Si. For the Y2O3 and the YSi2-x, the relationship is as follows: (11-1)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x; (111)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x. The formation mechanism of the interfacial phases of SiOx, YSixOy, and YSi2-x are described. It is shown that the crystallinity of the Y2O3 film on the SiO2-Si(111) is better than that of Y2O3 on H-Si(111).

Original languageEnglish
Pages (from-to)3028-3031
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number8
DOIs
Publication statusPublished - 1999 Aug 1
Externally publishedYes

Fingerprint

Ultrahigh vacuum
ultrahigh vacuum
Electron microscopes
electron microscopes
Substrates
Electron diffraction
electron diffraction
High resolution transmission electron microscopy
Hydrogen
crystallinity
transmission electron microscopy
microstructure
Microstructure
high resolution
hydrogen
Temperature
temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam. / Lee, Dong Hun; Seong, Tae Yeon; Cho, Man Ho; Whang, Chung Nam.

In: Journal of the Electrochemical Society, Vol. 146, No. 8, 01.08.1999, p. 3028-3031.

Research output: Contribution to journalArticle

@article{820ffc6cf4a047c9acf1580bc8917168,
title = "Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam",
abstract = "Y2O3 films were grown on SiO2-covered Si(111), and hydrogen-terminated Si(111) substrates at a temperature of 500°C by ultra-high vacuum ionized cluster beam deposition. The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high resolution transmission electron microscopy (HREM). The TED results show that the Y2O3 grown on the SiO2-Si has the epitaxial relationship of (11-1)Y(2)O(3)//(111)Si and [-110]Y(2)O(3)//[-110]Si. The film on the H-Si contains YSi2-x and amorphous YSixOy layers at the interface, having the orientation relationship each other. For the YSi2-x and the Si substrate, the relationship is (0001)YSi2-x//(111)Si and [1-210]YSi2-x//[-110]Si. For the Y2O3 and the YSi2-x, the relationship is as follows: (11-1)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x; (111)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x. The formation mechanism of the interfacial phases of SiOx, YSixOy, and YSi2-x are described. It is shown that the crystallinity of the Y2O3 film on the SiO2-Si(111) is better than that of Y2O3 on H-Si(111).",
author = "Lee, {Dong Hun} and Seong, {Tae Yeon} and Cho, {Man Ho} and Whang, {Chung Nam}",
year = "1999",
month = "8",
day = "1",
doi = "10.1149/1.1392046",
language = "English",
volume = "146",
pages = "3028--3031",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

TY - JOUR

T1 - Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam

AU - Lee, Dong Hun

AU - Seong, Tae Yeon

AU - Cho, Man Ho

AU - Whang, Chung Nam

PY - 1999/8/1

Y1 - 1999/8/1

N2 - Y2O3 films were grown on SiO2-covered Si(111), and hydrogen-terminated Si(111) substrates at a temperature of 500°C by ultra-high vacuum ionized cluster beam deposition. The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high resolution transmission electron microscopy (HREM). The TED results show that the Y2O3 grown on the SiO2-Si has the epitaxial relationship of (11-1)Y(2)O(3)//(111)Si and [-110]Y(2)O(3)//[-110]Si. The film on the H-Si contains YSi2-x and amorphous YSixOy layers at the interface, having the orientation relationship each other. For the YSi2-x and the Si substrate, the relationship is (0001)YSi2-x//(111)Si and [1-210]YSi2-x//[-110]Si. For the Y2O3 and the YSi2-x, the relationship is as follows: (11-1)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x; (111)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x. The formation mechanism of the interfacial phases of SiOx, YSixOy, and YSi2-x are described. It is shown that the crystallinity of the Y2O3 film on the SiO2-Si(111) is better than that of Y2O3 on H-Si(111).

AB - Y2O3 films were grown on SiO2-covered Si(111), and hydrogen-terminated Si(111) substrates at a temperature of 500°C by ultra-high vacuum ionized cluster beam deposition. The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high resolution transmission electron microscopy (HREM). The TED results show that the Y2O3 grown on the SiO2-Si has the epitaxial relationship of (11-1)Y(2)O(3)//(111)Si and [-110]Y(2)O(3)//[-110]Si. The film on the H-Si contains YSi2-x and amorphous YSixOy layers at the interface, having the orientation relationship each other. For the YSi2-x and the Si substrate, the relationship is (0001)YSi2-x//(111)Si and [1-210]YSi2-x//[-110]Si. For the Y2O3 and the YSi2-x, the relationship is as follows: (11-1)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x; (111)Y2O3//(0001)YSi2-x and [-110]Y2O3//[1-210]YSi2-x. The formation mechanism of the interfacial phases of SiOx, YSixOy, and YSi2-x are described. It is shown that the crystallinity of the Y2O3 film on the SiO2-Si(111) is better than that of Y2O3 on H-Si(111).

UR - http://www.scopus.com/inward/record.url?scp=0032592405&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032592405&partnerID=8YFLogxK

U2 - 10.1149/1.1392046

DO - 10.1149/1.1392046

M3 - Article

AN - SCOPUS:0032592405

VL - 146

SP - 3028

EP - 3031

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -