Transmission electron microscopy study of two-dimensional dopant profiling in metal-oxide-semiconductor field effect transistor test structures and devices

Chel Jong Choi, Tae Yeon Seong

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) combined with selective chemical etching was used to assess two-dimensional dopant profiles in the metal-oxide-semiconductor field effect transistor (MOSFET) test structures with a gate length of approx. 1 μm and real MOS devices with gate lengths of 500 and 80 nm. It is shown that the chemically delineated junction depth increases gradually with increasing implantation energy and dose. The TEM results show that crystallographic defects hamper the doping-dependent etching process in the n-type semiconductor. The lateral dopant profiles simulated by SUPREM IV are compared with TEM results calibrated by secondary ion mass spectroscopy. The delineation technique is effectively applied to characterize MOS devices.

Original languageEnglish
Pages (from-to)1525-1529
Number of pages5
JournalJournal of the Electrochemical Society
Volume147
Issue number4
DOIs
Publication statusPublished - 2000 Apr 1
Externally publishedYes

Fingerprint

MOSFET devices
metal oxide semiconductors
MOS devices
field effect transistors
Doping (additives)
Transmission electron microscopy
transmission electron microscopy
Etching
etching
n-type semiconductors
delineation
profiles
implantation
mass spectroscopy
Spectroscopy
Ions
Semiconductor materials
dosage
Defects
defects

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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abstract = "Transmission electron microscopy (TEM) combined with selective chemical etching was used to assess two-dimensional dopant profiles in the metal-oxide-semiconductor field effect transistor (MOSFET) test structures with a gate length of approx. 1 μm and real MOS devices with gate lengths of 500 and 80 nm. It is shown that the chemically delineated junction depth increases gradually with increasing implantation energy and dose. The TEM results show that crystallographic defects hamper the doping-dependent etching process in the n-type semiconductor. The lateral dopant profiles simulated by SUPREM IV are compared with TEM results calibrated by secondary ion mass spectroscopy. The delineation technique is effectively applied to characterize MOS devices.",
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N2 - Transmission electron microscopy (TEM) combined with selective chemical etching was used to assess two-dimensional dopant profiles in the metal-oxide-semiconductor field effect transistor (MOSFET) test structures with a gate length of approx. 1 μm and real MOS devices with gate lengths of 500 and 80 nm. It is shown that the chemically delineated junction depth increases gradually with increasing implantation energy and dose. The TEM results show that crystallographic defects hamper the doping-dependent etching process in the n-type semiconductor. The lateral dopant profiles simulated by SUPREM IV are compared with TEM results calibrated by secondary ion mass spectroscopy. The delineation technique is effectively applied to characterize MOS devices.

AB - Transmission electron microscopy (TEM) combined with selective chemical etching was used to assess two-dimensional dopant profiles in the metal-oxide-semiconductor field effect transistor (MOSFET) test structures with a gate length of approx. 1 μm and real MOS devices with gate lengths of 500 and 80 nm. It is shown that the chemically delineated junction depth increases gradually with increasing implantation energy and dose. The TEM results show that crystallographic defects hamper the doping-dependent etching process in the n-type semiconductor. The lateral dopant profiles simulated by SUPREM IV are compared with TEM results calibrated by secondary ion mass spectroscopy. The delineation technique is effectively applied to characterize MOS devices.

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