Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach

J. H. Ko, I. H. Kim, Donghwan Kim, K. S. Lee, T. S. Lee, B. Cheong, W. M. Kim

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

Zn-Sn-O (ZTO) films with continuous compositional gradient of Sn 16-89 at.% were prepared by co-sputtering of two targets of ZnO and SnO2 in a combinatorial method. The resistivities of the ZTO films were severely dependent on oxygen content in sputtering gas and Zn/Sn ratio. Except for the films with Sn 16 at.%, all the as-prepared films were amorphous and maintaining the stable amorphous states up to the annealing temperature of 450 °C. Annealing at 650 °C resulted in crystallization for all the composition, in which ZnO, Zn2SnO4, ZnSnO3, and SnO2 peaks were appeared successively with increasing Sn content. Above Sn 54 at.%, the ZTO films were deduced to have a local structure mixed with ZnSnO3 and SnO2 phases which were more conductive and stable in thermal oxidation than ZnO and Zn2SnO4 phases. The lowest resistivity of 1.9 × 10-3 Ω cm was obtained for the films with Sn 89 at.% when annealed at 450 °C in a vacuum. The carrier concentrations of the amorphous ZTO films that contained Sn contents higher than 36 at.% and annealed at 450 °C in a vacuum were proportional to the Sn contents, while the Hall mobilities were insensitive to Sn contents and leveling in the range of 23-26 cm2/V s.

Original languageEnglish
Pages (from-to)7398-7403
Number of pages6
JournalApplied Surface Science
Volume253
Issue number18
DOIs
Publication statusPublished - 2007 Jul 15

Fingerprint

conduction
Thin films
thin films
Amorphous films
Sputtering
Vacuum
Annealing
Hall mobility
sputtering
Crystallization
Carrier concentration
vacuum
electrical resistivity
annealing
leveling
Gases
Oxygen
Oxidation
Chemical analysis
crystallization

Keywords

  • Amorphous
  • Thin film
  • Transparent conducting oxide
  • Zinc tin oxide

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Ko, J. H., Kim, I. H., Kim, D., Lee, K. S., Lee, T. S., Cheong, B., & Kim, W. M. (2007). Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach. Applied Surface Science, 253(18), 7398-7403. https://doi.org/10.1016/j.apsusc.2007.03.036

Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach. / Ko, J. H.; Kim, I. H.; Kim, Donghwan; Lee, K. S.; Lee, T. S.; Cheong, B.; Kim, W. M.

In: Applied Surface Science, Vol. 253, No. 18, 15.07.2007, p. 7398-7403.

Research output: Contribution to journalArticle

Ko, J. H. ; Kim, I. H. ; Kim, Donghwan ; Lee, K. S. ; Lee, T. S. ; Cheong, B. ; Kim, W. M. / Transparent and conducting Zn-Sn-O thin films prepared by combinatorial approach. In: Applied Surface Science. 2007 ; Vol. 253, No. 18. pp. 7398-7403.
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