Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Jaewon Jang, Kyoungah Cho, Sang Heon Lee, Sangsig Kim

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10 3 and a field-effect mobility of 4.1 cm2 V-1 s-1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10 3 and a field-effect mobility of 4.0 cm2 V-1 s-1.

Original languageEnglish
Article number015204
JournalNanotechnology
Volume19
Issue number1
DOIs
Publication statusPublished - 2008 Jan 9

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Thin film transistors
Nanoparticles
Nanocrystals
Ozone
Substrates
Plastics
Electric properties
Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals. / Jang, Jaewon; Cho, Kyoungah; Lee, Sang Heon; Kim, Sangsig.

In: Nanotechnology, Vol. 19, No. 1, 015204, 09.01.2008.

Research output: Contribution to journalArticle

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