Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes

Seung Won Yeom, Hyeon Jun Ha, Junsu Park, Jae Won Shim, Byeong Kwon Ju

Research output: Contribution to journalLetter

5 Citations (Scopus)

Abstract

We fabricated transparent indium zinc oxide (IZO)/TiO2/IZO devices on flexible polyethylene phthalate (PET) substrates. These devices demonstrate bipolar resistive switching behavior, exhibit a transmittance greater than 80 % for visible light, and have stable resistive switching properties, including long retention and good endurance. In addition, the devices were investigated based on their temperature dependence; the results show metallic properties in the low-resistance state (LRS) and semiconducting properties in the high-resistance state (HRS). The conduction mechanism for resistive switching in our device was well-fitted with Ohmic conduction in the LRS and Poole-Frenkel emission in the HRS. The mechanism could be explained by the formation and the rupture of the conduction paths formed by the movement of oxygen ions and vacancies. Moreover, acute bending of the devices did not affect the memory characteristics because of the pliability of both the IZO electrodes and the thin oxide layer. These results indicate potential applications as resistive random access memories in future flexible, transparent electronic devices.

Original languageEnglish
Pages (from-to)1613-1618
Number of pages6
JournalJournal of the Korean Physical Society
Volume69
Issue number11
DOIs
Publication statusPublished - 2016 Dec 1

Fingerprint

zinc oxides
indium oxides
electrodes
low resistance
high resistance
conduction
phthalates
endurance
random access memory
oxygen ions
polyethylenes
transmittance
temperature dependence
oxides
electronics

Keywords

  • Flexible electronics
  • Oxygen vacancy
  • Poole-Frenkel emission
  • ReRAM
  • Resistive switching
  • TiO
  • Transparent electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes. / Yeom, Seung Won; Ha, Hyeon Jun; Park, Junsu; Shim, Jae Won; Ju, Byeong Kwon.

In: Journal of the Korean Physical Society, Vol. 69, No. 11, 01.12.2016, p. 1613-1618.

Research output: Contribution to journalLetter

Yeom, Seung Won ; Ha, Hyeon Jun ; Park, Junsu ; Shim, Jae Won ; Ju, Byeong Kwon. / Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes. In: Journal of the Korean Physical Society. 2016 ; Vol. 69, No. 11. pp. 1613-1618.
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AU - Ha, Hyeon Jun

AU - Park, Junsu

AU - Shim, Jae Won

AU - Ju, Byeong Kwon

PY - 2016/12/1

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N2 - We fabricated transparent indium zinc oxide (IZO)/TiO2/IZO devices on flexible polyethylene phthalate (PET) substrates. These devices demonstrate bipolar resistive switching behavior, exhibit a transmittance greater than 80 % for visible light, and have stable resistive switching properties, including long retention and good endurance. In addition, the devices were investigated based on their temperature dependence; the results show metallic properties in the low-resistance state (LRS) and semiconducting properties in the high-resistance state (HRS). The conduction mechanism for resistive switching in our device was well-fitted with Ohmic conduction in the LRS and Poole-Frenkel emission in the HRS. The mechanism could be explained by the formation and the rupture of the conduction paths formed by the movement of oxygen ions and vacancies. Moreover, acute bending of the devices did not affect the memory characteristics because of the pliability of both the IZO electrodes and the thin oxide layer. These results indicate potential applications as resistive random access memories in future flexible, transparent electronic devices.

AB - We fabricated transparent indium zinc oxide (IZO)/TiO2/IZO devices on flexible polyethylene phthalate (PET) substrates. These devices demonstrate bipolar resistive switching behavior, exhibit a transmittance greater than 80 % for visible light, and have stable resistive switching properties, including long retention and good endurance. In addition, the devices were investigated based on their temperature dependence; the results show metallic properties in the low-resistance state (LRS) and semiconducting properties in the high-resistance state (HRS). The conduction mechanism for resistive switching in our device was well-fitted with Ohmic conduction in the LRS and Poole-Frenkel emission in the HRS. The mechanism could be explained by the formation and the rupture of the conduction paths formed by the movement of oxygen ions and vacancies. Moreover, acute bending of the devices did not affect the memory characteristics because of the pliability of both the IZO electrodes and the thin oxide layer. These results indicate potential applications as resistive random access memories in future flexible, transparent electronic devices.

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KW - TiO

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