Transparent conducting oxide electrodes for novel metal oxide gas sensors

Young Seok Shim, Hi Gyu Moon, Do Hong Kim, Ho Won Jang, Chong-Yun Kang, Young Soo Yoon, Soek Jin Yoon

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

Original languageEnglish
Pages (from-to)357-363
Number of pages7
JournalSensors and Actuators, B: Chemical
Volume160
Issue number1
DOIs
Publication statusPublished - 2011 Dec 15

Fingerprint

Chemical sensors
Oxides
metal oxides
Tin oxides
Indium
Metals
indium oxides
tin oxides
conduction
Electrodes
electrodes
oxides
sensors
gases
Oxide films
Zinc Oxide
oxide films
Sensors
Zinc oxide
Aluminum

Keywords

  • Aluminum-doped zinc oxide
  • Gas sensors
  • Indium-tin oxide
  • Ohmic contact
  • Transparent conducting oxides

ASJC Scopus subject areas

  • Instrumentation
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Shim, Y. S., Moon, H. G., Kim, D. H., Jang, H. W., Kang, C-Y., Yoon, Y. S., & Yoon, S. J. (2011). Transparent conducting oxide electrodes for novel metal oxide gas sensors. Sensors and Actuators, B: Chemical, 160(1), 357-363. https://doi.org/10.1016/j.snb.2011.07.061

Transparent conducting oxide electrodes for novel metal oxide gas sensors. / Shim, Young Seok; Moon, Hi Gyu; Kim, Do Hong; Jang, Ho Won; Kang, Chong-Yun; Yoon, Young Soo; Yoon, Soek Jin.

In: Sensors and Actuators, B: Chemical, Vol. 160, No. 1, 15.12.2011, p. 357-363.

Research output: Contribution to journalArticle

Shim, YS, Moon, HG, Kim, DH, Jang, HW, Kang, C-Y, Yoon, YS & Yoon, SJ 2011, 'Transparent conducting oxide electrodes for novel metal oxide gas sensors', Sensors and Actuators, B: Chemical, vol. 160, no. 1, pp. 357-363. https://doi.org/10.1016/j.snb.2011.07.061
Shim, Young Seok ; Moon, Hi Gyu ; Kim, Do Hong ; Jang, Ho Won ; Kang, Chong-Yun ; Yoon, Young Soo ; Yoon, Soek Jin. / Transparent conducting oxide electrodes for novel metal oxide gas sensors. In: Sensors and Actuators, B: Chemical. 2011 ; Vol. 160, No. 1. pp. 357-363.
@article{aa80c4f458074bd2a7808df0d79756a3,
title = "Transparent conducting oxide electrodes for novel metal oxide gas sensors",
abstract = "We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75{\%}, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.",
keywords = "Aluminum-doped zinc oxide, Gas sensors, Indium-tin oxide, Ohmic contact, Transparent conducting oxides",
author = "Shim, {Young Seok} and Moon, {Hi Gyu} and Kim, {Do Hong} and Jang, {Ho Won} and Chong-Yun Kang and Yoon, {Young Soo} and Yoon, {Soek Jin}",
year = "2011",
month = "12",
day = "15",
doi = "10.1016/j.snb.2011.07.061",
language = "English",
volume = "160",
pages = "357--363",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Transparent conducting oxide electrodes for novel metal oxide gas sensors

AU - Shim, Young Seok

AU - Moon, Hi Gyu

AU - Kim, Do Hong

AU - Jang, Ho Won

AU - Kang, Chong-Yun

AU - Yoon, Young Soo

AU - Yoon, Soek Jin

PY - 2011/12/15

Y1 - 2011/12/15

N2 - We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

AB - We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium-tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10-4 to 7.0 × 10-4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10-3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO 2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.

KW - Aluminum-doped zinc oxide

KW - Gas sensors

KW - Indium-tin oxide

KW - Ohmic contact

KW - Transparent conducting oxides

UR - http://www.scopus.com/inward/record.url?scp=81155152447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81155152447&partnerID=8YFLogxK

U2 - 10.1016/j.snb.2011.07.061

DO - 10.1016/j.snb.2011.07.061

M3 - Article

VL - 160

SP - 357

EP - 363

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

ER -