Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

Hee Dong Kim, Min Ju Yun, Jae Hoon Lee, Kyoeng Heon Kim, Tae Geun Kim

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

Original languageEnglish
Article number4614
JournalScientific Reports
Volume4
DOIs
Publication statusPublished - 2014 Apr 9

Fingerprint

ITO (semiconductors)
coating
graphene
gels
oxides
cells
endurance
pulse amplitude
electronics
transmittance
cycles

ASJC Scopus subject areas

  • General

Cite this

Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method. / Kim, Hee Dong; Yun, Min Ju; Lee, Jae Hoon; Kim, Kyoeng Heon; Kim, Tae Geun.

In: Scientific Reports, Vol. 4, 4614, 09.04.2014.

Research output: Contribution to journalArticle

@article{329475cc6fe9497da8b441e038a7715f,
title = "Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method",
abstract = "A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80{\%} (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2{\^a} €...V to 7{\^a} €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 {\^a} €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.",
author = "Kim, {Hee Dong} and Yun, {Min Ju} and Lee, {Jae Hoon} and Kim, {Kyoeng Heon} and Kim, {Tae Geun}",
year = "2014",
month = "4",
day = "9",
doi = "10.1038/srep04614",
language = "English",
volume = "4",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method

AU - Kim, Hee Dong

AU - Yun, Min Ju

AU - Lee, Jae Hoon

AU - Kim, Kyoeng Heon

AU - Kim, Tae Geun

PY - 2014/4/9

Y1 - 2014/4/9

N2 - A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

AB - A reduced graphene oxide (RGO)-based transparent electronic memory cell with multi-level resistive switching (RS) was successfully realized by a dip-coating method. Using ITO/RGO/ITO structures, the memory device exhibited a transmittance above 80% (including the substrate) in the visible region and multi-level RS behavior in the 00, 01, 10, and 11 states by varying the pulse height from 2â €...V to 7â €...V. In the reliability test, the device exhibited a good endurance of over 10 5 cycles and a long data retention of over 10 5 â €...s at 85°C in each state. We believe that the RGO-based transparent memory presented in this work could be a milestone for future transparent electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=84898406197&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898406197&partnerID=8YFLogxK

U2 - 10.1038/srep04614

DO - 10.1038/srep04614

M3 - Article

AN - SCOPUS:84898406197

VL - 4

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 4614

ER -