Transparent nano-floating gate memory on glass

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of ∼71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm2 V-1 s-1, about 104, and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass.

Original languageEnglish
Article number335201
JournalNanotechnology
Volume21
Issue number33
DOIs
Publication statusPublished - 2010 Aug 20

Fingerprint

Glass
Data storage equipment
Equipment and Supplies
Nanoparticles
Electrodes
Electron mobility
Electrons
Thin film transistors
Threshold voltage
Durability
Substrates
Retention (Psychology)

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Transparent nano-floating gate memory on glass. / Park, Byoungjun; Cho, Kyoungah; Kim, Sungsu; Kim, Sangsig.

In: Nanotechnology, Vol. 21, No. 33, 335201, 20.08.2010.

Research output: Contribution to journalArticle

Park, Byoungjun ; Cho, Kyoungah ; Kim, Sungsu ; Kim, Sangsig. / Transparent nano-floating gate memory on glass. In: Nanotechnology. 2010 ; Vol. 21, No. 33.
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