We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of ∼71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm2 V-1 s-1, about 104, and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)