Transparent resistive switching memory using aluminum oxide on a flexible substrate

Seung Won Yeom, Sang Chul Shin, Tan Young Kim, Hyeon Jun Ha, Yun-Hi Lee, Jae Won Shim, Byeong Kwon Ju

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Original languageEnglish
Article number07LT01
JournalNanotechnology
Volume27
Issue number7
DOIs
Publication statusPublished - 2016 Jan 14

Fingerprint

Aluminum Oxide
Zinc Oxide
Indium
Zinc oxide
Aluminum
Data storage equipment
Equipment and Supplies
Oxides
Substrates
Electrodes
Oxygen vacancies
Photoelectron spectroscopy
Photoelectron Spectroscopy
X rays
X-Rays
RRAM
Oxygen
indium oxide

Keywords

  • oxygen vacancy
  • Poole-Frenkel emission
  • ReRAM
  • resistive switching

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Transparent resistive switching memory using aluminum oxide on a flexible substrate. / Yeom, Seung Won; Shin, Sang Chul; Kim, Tan Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong Kwon.

In: Nanotechnology, Vol. 27, No. 7, 07LT01, 14.01.2016.

Research output: Contribution to journalArticle

Yeom, Seung Won ; Shin, Sang Chul ; Kim, Tan Young ; Ha, Hyeon Jun ; Lee, Yun-Hi ; Shim, Jae Won ; Ju, Byeong Kwon. / Transparent resistive switching memory using aluminum oxide on a flexible substrate. In: Nanotechnology. 2016 ; Vol. 27, No. 7.
@article{385fd53acf474a219803479eaa0b104c,
title = "Transparent resistive switching memory using aluminum oxide on a flexible substrate",
abstract = "Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80{\%} in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.",
keywords = "oxygen vacancy, Poole-Frenkel emission, ReRAM, resistive switching",
author = "Yeom, {Seung Won} and Shin, {Sang Chul} and Kim, {Tan Young} and Ha, {Hyeon Jun} and Yun-Hi Lee and Shim, {Jae Won} and Ju, {Byeong Kwon}",
year = "2016",
month = "1",
day = "14",
doi = "10.1088/0957-4484/27/7/07LT01",
language = "English",
volume = "27",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Transparent resistive switching memory using aluminum oxide on a flexible substrate

AU - Yeom, Seung Won

AU - Shin, Sang Chul

AU - Kim, Tan Young

AU - Ha, Hyeon Jun

AU - Lee, Yun-Hi

AU - Shim, Jae Won

AU - Ju, Byeong Kwon

PY - 2016/1/14

Y1 - 2016/1/14

N2 - Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

AB - Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

KW - oxygen vacancy

KW - Poole-Frenkel emission

KW - ReRAM

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=84955442723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955442723&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/27/7/07LT01

DO - 10.1088/0957-4484/27/7/07LT01

M3 - Article

AN - SCOPUS:84955442723

VL - 27

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 7

M1 - 07LT01

ER -