This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.
- nonvolatile memory (NVM)
- transparent resistive random access memory (ReRAM) (T-ReRAM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering