Transparent resistive switching memory using ITO/AlN/ITO capacitors

Hee Dong Kim, Ho Myoung An, Yujeong Seo, Tae Geun Kim

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

Original languageEnglish
Article number5873117
Pages (from-to)1125-1127
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

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Capacitors
Data storage equipment
Durability
Fabrication
Substrates

Keywords

  • AlN
  • nonvolatile memory (NVM)
  • transparent resistive random access memory (ReRAM) (T-ReRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Transparent resistive switching memory using ITO/AlN/ITO capacitors. / Kim, Hee Dong; An, Ho Myoung; Seo, Yujeong; Kim, Tae Geun.

In: IEEE Electron Device Letters, Vol. 32, No. 8, 5873117, 01.08.2011, p. 1125-1127.

Research output: Contribution to journalArticle

Kim, Hee Dong ; An, Ho Myoung ; Seo, Yujeong ; Kim, Tae Geun. / Transparent resistive switching memory using ITO/AlN/ITO capacitors. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 8. pp. 1125-1127.
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