Transparent resistive switching memory using ITO/AlN/ITO capacitors

Hee Dong Kim, Ho Myoung An, Yujeong Seo, Tae Geun Kim

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56 Citations (Scopus)

Abstract

This letter covers the fabrication of a transparent resistive random access memory (T-ReRAM) device using ITO/AlN/ITO capacitors and its observed resistive switching characteristics. This AlN-based T-ReRAM shows a transmittance above 80% (including the substrate) in the visible region and an excellent switching behavior under ±3 V/10 ns with a high-to-low resistance ratio greater than 102. In the reliability test, the device showed an endurance of 108 cycles and a retention time of 10-5s at 85 °C. We believe that the AlN-based T-ReRAM presented in this letter could be a milestone for future see-through electronic devices.

Original languageEnglish
Article number5873117
Pages (from-to)1125-1127
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number8
DOIs
Publication statusPublished - 2011 Aug 1

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Keywords

  • AlN
  • nonvolatile memory (NVM)
  • transparent resistive random access memory (ReRAM) (T-ReRAM)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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