Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Young-geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

Original languageEnglish
Article number093913
JournalJournal of Applied Physics
Volume111
Issue number9
DOIs
Publication statusPublished - 2012 May 1

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, D. H., Kim, D. K., Cho, J. U., Park, S. Y., Isogami, S., Tsunoda, M., Takahashi, M., Fullerton, E. E., & Kim, Y. (2012). Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers. Journal of Applied Physics, 111(9), [093913]. https://doi.org/10.1063/1.4709738