Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Young-geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

Original languageEnglish
Article number093913
JournalJournal of Applied Physics
Volume111
Issue number9
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

tunnel junctions
torque
critical current
current density
products

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers. / Kim, D. H.; Kim, D. K.; Cho, J. U.; Park, S. Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Fullerton, E. E.; Kim, Young-geun.

In: Journal of Applied Physics, Vol. 111, No. 9, 093913, 01.05.2012.

Research output: Contribution to journalArticle

Kim, DH, Kim, DK, Cho, JU, Park, SY, Isogami, S, Tsunoda, M, Takahashi, M, Fullerton, EE & Kim, Y 2012, 'Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers', Journal of Applied Physics, vol. 111, no. 9, 093913. https://doi.org/10.1063/1.4709738
Kim, D. H. ; Kim, D. K. ; Cho, J. U. ; Park, S. Y. ; Isogami, S. ; Tsunoda, M. ; Takahashi, M. ; Fullerton, E. E. ; Kim, Young-geun. / Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers. In: Journal of Applied Physics. 2012 ; Vol. 111, No. 9.
@article{782b44474fc947f1842ba0a9f02245a2,
title = "Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers",
abstract = "We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130{\%} and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.",
author = "Kim, {D. H.} and Kim, {D. K.} and Cho, {J. U.} and Park, {S. Y.} and S. Isogami and M. Tsunoda and M. Takahashi and Fullerton, {E. E.} and Young-geun Kim",
year = "2012",
month = "5",
day = "1",
doi = "10.1063/1.4709738",
language = "English",
volume = "111",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

AU - Kim, D. H.

AU - Kim, D. K.

AU - Cho, J. U.

AU - Park, S. Y.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, M.

AU - Fullerton, E. E.

AU - Kim, Young-geun

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

AB - We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

UR - http://www.scopus.com/inward/record.url?scp=84864266211&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864266211&partnerID=8YFLogxK

U2 - 10.1063/1.4709738

DO - 10.1063/1.4709738

M3 - Article

AN - SCOPUS:84864266211

VL - 111

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 093913

ER -