TY - JOUR
T1 - Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors
AU - Park, So Jeong
AU - Nam, Deukhyeon
AU - Jeon, Dae Young
AU - Kim, Gyu Tae
N1 - Funding Information:
This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry &Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
Publisher Copyright:
© 2019 IOP Publishing Ltd.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2019/6/21
Y1 - 2019/6/21
N2 - We present the electrical characteristics of ionic liquid-gated ambipolar WSe2 field-effect transistors (FET) and analyze them graphically using a transport map. With the transport map, the ambipolar I-V characteristics, which have either electrons or holes as the majority charge carriers depending on the bias conditions, were easily divided into the electron and hole conduction regimes. The effect of the drain bias (V d) on trapped charges is inferred from the decreased offset voltage, which indicates the downward deflection of the channel energy band with the V d. We confirmed the change of the majority carrier types shown in the transport map by analyzing the output curves, which show a transition from rectifying to saturated behavior. The existence of a relatively thin Schottky barrier for hole conduction is supported by the degradation in the transconductance curves and the variation in V th with the V d. These results provide important information for understanding the operating mechanism of ambipolar WSe2 FETs gated by ionic liquids and can be extended to FETs based on other two-dimensional semiconducting materials.
AB - We present the electrical characteristics of ionic liquid-gated ambipolar WSe2 field-effect transistors (FET) and analyze them graphically using a transport map. With the transport map, the ambipolar I-V characteristics, which have either electrons or holes as the majority charge carriers depending on the bias conditions, were easily divided into the electron and hole conduction regimes. The effect of the drain bias (V d) on trapped charges is inferred from the decreased offset voltage, which indicates the downward deflection of the channel energy band with the V d. We confirmed the change of the majority carrier types shown in the transport map by analyzing the output curves, which show a transition from rectifying to saturated behavior. The existence of a relatively thin Schottky barrier for hole conduction is supported by the degradation in the transconductance curves and the variation in V th with the V d. These results provide important information for understanding the operating mechanism of ambipolar WSe2 FETs gated by ionic liquids and can be extended to FETs based on other two-dimensional semiconducting materials.
KW - Schottky barrier transistor
KW - WSe field-effect transistor
KW - ionic liquid gating
KW - transport map, graphical analysis
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U2 - 10.1088/1361-6641/ab22eb
DO - 10.1088/1361-6641/ab22eb
M3 - Article
AN - SCOPUS:85070664485
VL - 34
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
M1 - 075022
ER -