Abstract
We present the electrical characteristics of ionic liquid-gated ambipolar WSe2 field-effect transistors (FET) and analyze them graphically using a transport map. With the transport map, the ambipolar I-V characteristics, which have either electrons or holes as the majority charge carriers depending on the bias conditions, were easily divided into the electron and hole conduction regimes. The effect of the drain bias (V d) on trapped charges is inferred from the decreased offset voltage, which indicates the downward deflection of the channel energy band with the V d. We confirmed the change of the majority carrier types shown in the transport map by analyzing the output curves, which show a transition from rectifying to saturated behavior. The existence of a relatively thin Schottky barrier for hole conduction is supported by the degradation in the transconductance curves and the variation in V th with the V d. These results provide important information for understanding the operating mechanism of ambipolar WSe2 FETs gated by ionic liquids and can be extended to FETs based on other two-dimensional semiconducting materials.
| Original language | English |
|---|---|
| Article number | 075022 |
| Journal | Semiconductor Science and Technology |
| Volume | 34 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2019 Jun 21 |
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Keywords
- ionic liquid gating
- Schottky barrier transistor
- transport map, graphical analysis
- WSe field-effect transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors. / Park, So Jeong; Nam, Deukhyeon; Jeon, Dae Young; Kim, Gyu-Tae.
In: Semiconductor Science and Technology, Vol. 34, No. 7, 075022, 21.06.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors
AU - Park, So Jeong
AU - Nam, Deukhyeon
AU - Jeon, Dae Young
AU - Kim, Gyu-Tae
PY - 2019/6/21
Y1 - 2019/6/21
N2 - We present the electrical characteristics of ionic liquid-gated ambipolar WSe2 field-effect transistors (FET) and analyze them graphically using a transport map. With the transport map, the ambipolar I-V characteristics, which have either electrons or holes as the majority charge carriers depending on the bias conditions, were easily divided into the electron and hole conduction regimes. The effect of the drain bias (V d) on trapped charges is inferred from the decreased offset voltage, which indicates the downward deflection of the channel energy band with the V d. We confirmed the change of the majority carrier types shown in the transport map by analyzing the output curves, which show a transition from rectifying to saturated behavior. The existence of a relatively thin Schottky barrier for hole conduction is supported by the degradation in the transconductance curves and the variation in V th with the V d. These results provide important information for understanding the operating mechanism of ambipolar WSe2 FETs gated by ionic liquids and can be extended to FETs based on other two-dimensional semiconducting materials.
AB - We present the electrical characteristics of ionic liquid-gated ambipolar WSe2 field-effect transistors (FET) and analyze them graphically using a transport map. With the transport map, the ambipolar I-V characteristics, which have either electrons or holes as the majority charge carriers depending on the bias conditions, were easily divided into the electron and hole conduction regimes. The effect of the drain bias (V d) on trapped charges is inferred from the decreased offset voltage, which indicates the downward deflection of the channel energy band with the V d. We confirmed the change of the majority carrier types shown in the transport map by analyzing the output curves, which show a transition from rectifying to saturated behavior. The existence of a relatively thin Schottky barrier for hole conduction is supported by the degradation in the transconductance curves and the variation in V th with the V d. These results provide important information for understanding the operating mechanism of ambipolar WSe2 FETs gated by ionic liquids and can be extended to FETs based on other two-dimensional semiconducting materials.
KW - ionic liquid gating
KW - Schottky barrier transistor
KW - transport map, graphical analysis
KW - WSe field-effect transistor
UR - http://www.scopus.com/inward/record.url?scp=85070664485&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070664485&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/ab22eb
DO - 10.1088/1361-6641/ab22eb
M3 - Article
AN - SCOPUS:85070664485
VL - 34
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
M1 - 075022
ER -