Transport of perpendicular spin in a semiconductor channel via a fully electrical method

Joohyung Bae, Kyung Ho Kim, Jung Min Han, Hyun Cheol Koo, Byoung Chul Min, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Sang Ho Lim

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6 Citations (Scopus)

Abstract

The transport of perpendicular spins in a GaAs channel is investigated via a fully electrical method. A Tb20Fe62Co 18/Co40Fe40B20/MgO contact is used to inject perpendicular spin into the GaAs channel, where the Tb 20Fe62Co18 layer produces perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization of the injection current. By measuring the three-terminal Hanle effect with an in-plane field, we obtained a spin signal of 0.65 Ω (0.04 Ω) and a spin lifetime of 0.30 ns (0.17 ns) at 1.8 K (300 K). The observed spin signal with a MgO barrier is more than double of that without a MgO barrier.

Original languageEnglish
Article number062412
JournalApplied Physics Letters
Volume102
Issue number6
DOIs
Publication statusPublished - 2013 Feb 11

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Bae, J., Kim, K. H., Han, J. M., Cheol Koo, H., Min, B. C., Kim, H. J., Chang, J., Hee Han, S., & Ho Lim, S. (2013). Transport of perpendicular spin in a semiconductor channel via a fully electrical method. Applied Physics Letters, 102(6), [062412]. https://doi.org/10.1063/1.4792690