Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures

I. S. Choi; S. Y. An; S. J. Chung; S. Lee; X. Liu; J. Furdyna

doi:10.1063/1.2169391

Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures

I. S. Choi, S. Y. An, S. J. Chung, S. Lee, X. Liu, J. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers.

Original language	English
Article number	08D512
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2169391
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures",

abstract = "We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers.",

author = "Choi, {I. S.} and An, {S. Y.} and Chung, {S. J.} and S. Lee and X. Liu and J. Furdyna",

note = "Funding Information: This research was supported by NSF Grant No. DMR02-45227 and by Korea Research Foundation Grant No. (KRF-2004-005-C00068), and by KOSEF through QSRC at Dongguk University. ",

year = "2006",

doi = "10.1063/1.2169391",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures

AU - Choi, I. S.

AU - An, S. Y.

AU - Chung, S. J.

AU - Lee, S.

AU - Liu, X.

AU - Furdyna, J.

N1 - Funding Information: This research was supported by NSF Grant No. DMR02-45227 and by Korea Research Foundation Grant No. (KRF-2004-005-C00068), and by KOSEF through QSRC at Dongguk University.

PY - 2006

Y1 - 2006

N2 - We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers.

AB - We have investigated the magnetotransport properties of a series of magnetic semiconductor bilayer structures consisting of 300-nm-thick Ga1-x Mnx As and 150-nm-thick Zn1-y Mny Se layers. The temperature scan of resistance and an Arrot plot obtained from Hall resistance data showed that the Curie temperature (TC) of the GaMnAsZnMnSe bilayer is higher than that of the bare GaMnAs. Furthermore, magnetoresistance measurement reveals significant enhancement of the magnetic hardness of the GaMnAs system in bilayer form even though the magnetic easy axis of the GaMnAs was not altered by the neighboring ZnMnSe layer. This observation indicates that the magnetotransport properties of GaMnAs can be changed by an adjacent magnetic layer due to the interactions between the two magnetic layers.

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U2 - 10.1063/1.2169391

DO - 10.1063/1.2169391

M3 - Article

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SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 08D512

ER -

Transport properties of ferromagnetic GaMnAs interfaced with paramagnetic ZnMnSe in the form of bilayer structures

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