Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers

Ji Ung Cho; Do Kyun Kim; Reasmey P. Tan; Shinji Isogami; Masakiyo Tsunoda; Migaku Takahashi; Young Keun Kim

doi:10.1109/TMAG.2009.2018574

Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers

Ji Ung Cho, Do Kyun Kim, Reasmey P. Tan, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, Young Keun Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.

Original language	English
Article number	4957806
Pages (from-to)	2364-2366
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2009.2018574
Publication status	Published - 2009 Jun

Keywords

Amorphous
Hybrid free layer
Magnetic tunnel junction
NiFeSiB

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2009.2018574

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title = "Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers",

abstract = "We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.",

keywords = "Amorphous, Hybrid free layer, Magnetic tunnel junction, NiFeSiB",

author = "Cho, {Ji Ung} and Kim, {Do Kyun} and Tan, {Reasmey P.} and Shinji Isogami and Masakiyo Tsunoda and Migaku Takahashi and Kim, {Young Keun}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported in part by the Korea Science and Engineering Foundation through the National Research Laboratory Program (No. M10500000105-05J0000-10510), and Tera level Nanodevices Program (No. M103KC010006-06K301-00631). R. P. Tan acknowledges the support of the Brain Korea 21 Program.",

year = "2009",

month = jun,

doi = "10.1109/TMAG.2009.2018574",

language = "English",

volume = "45",

pages = "2364--2366",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Cho, Ji Ung

AU - Kim, Do Kyun

AU - Tan, Reasmey P.

AU - Isogami, Shinji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Kim, Young Keun

N1 - Funding Information: ACKNOWLEDGMENT This work was supported in part by the Korea Science and Engineering Foundation through the National Research Laboratory Program (No. M10500000105-05J0000-10510), and Tera level Nanodevices Program (No. M103KC010006-06K301-00631). R. P. Tan acknowledges the support of the Brain Korea 21 Program.

PY - 2009/6

Y1 - 2009/6

N2 - We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.

AB - We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.

KW - Amorphous

KW - Hybrid free layer

KW - Magnetic tunnel junction

KW - NiFeSiB

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U2 - 10.1109/TMAG.2009.2018574

DO - 10.1109/TMAG.2009.2018574

M3 - Article

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VL - 45

SP - 2364

EP - 2366

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 6

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ER -

Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers

Abstract

Keywords

ASJC Scopus subject areas

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