Abstract
We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.
| Original language | English |
|---|---|
| Article number | 4957806 |
| Pages (from-to) | 2364-2366 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 45 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 Jun 1 |
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Keywords
- Amorphous
- Hybrid free layer
- Magnetic tunnel junction
- NiFeSiB
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers. / Cho, Ji Ung; Kim, Do Kyun; Tan, Reasmey P.; Isogami, Shinji; Tsunoda, Masakiyo; Takahashi, Migaku; Kim, Young-geun.
In: IEEE Transactions on Magnetics, Vol. 45, No. 6, 4957806, 01.06.2009, p. 2364-2366.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Transport properties of magnetic tunnel junctions comprising NiFeSiB/CoFeB hybrid free layers
AU - Cho, Ji Ung
AU - Kim, Do Kyun
AU - Tan, Reasmey P.
AU - Isogami, Shinji
AU - Tsunoda, Masakiyo
AU - Takahashi, Migaku
AU - Kim, Young-geun
PY - 2009/6/1
Y1 - 2009/6/1
N2 - We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.
AB - We report on the magneto-transport measurements of MgO magnetic tunnel junctions (MTJs) composed of NiFeSiB/CoFeB as the free layer for two different structures (top-type and bottom-type pinning). The magneto-transport properties of these MTJs were investigated by varying the thickness of the amorphous NiFeSiB layer for a fixed CoFeB thickness. The tunnel magnetoresistance (TMR), measured in both type of structures, exhibit the same or a higher amplitude (up to 230% measured at room temperature in the case of top-type device), comparing to the case of a single CoFeB free layer. These results suggest that hybrids free layers can be used as good candidates for MTJs with reduced saturation magnetization while keeping a high TMR ratio.
KW - Amorphous
KW - Hybrid free layer
KW - Magnetic tunnel junction
KW - NiFeSiB
UR - http://www.scopus.com/inward/record.url?scp=66549129456&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=66549129456&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2009.2018574
DO - 10.1109/TMAG.2009.2018574
M3 - Article
VL - 45
SP - 2364
EP - 2366
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 6
M1 - 4957806
ER -