Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system

Hyun Cheol Koo, Hyunjung Yi, J. D. Song, Joonyeon Chang, S. H. Han

Research output: Contribution to journalArticle

Abstract

Two-dimensional electron gas layer is essential for a developing spin-FET because of its high mobility and large spin-orbit coupling. The junction properties between a ferromagnet (FM) and a 2-DEG system are the most important factor. Two types of a 2-DEG layer, an InAs and a GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. A GaAs-based channel 2-DEG layer with Al2O3 tunneling layer using a new oxidization method is prepared. During the heat treatment at the furnace, the arsenic gas was evaporated and the top AlAs layer was converted to the aluminum oxide layer. An InAs channel 2-DEG layer with a semiconductor-based barrier and FM junction shows the ohmic behavior. In the potentiometric measurement, a spin-orbit coupling of 2-DEG layer is observed in the interface between a FM and an InAs channel 2-DEG layer, which proves the efficient spin transport junction.

Original languageEnglish
Pages (from-to)1682-1686
Number of pages5
JournalSolid-State Electronics
Volume50
Issue number11-12
DOIs
Publication statusPublished - 2006 Nov 1
Externally publishedYes

Fingerprint

Hybrid systems
Transport properties
Orbits
transport properties
Semiconductor materials
Two dimensional electron gas
Field effect transistors
Arsenic
Heterojunctions
Furnaces
Aluminum Oxide
Heat treatment
Aluminum
Oxides
Gases
orbits
indium arsenide
arsenic
furnaces
electron gas

Keywords

  • 2-DEG
  • Potentiometric measurement
  • Spin-orbit coupling
  • Transmission property

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system. / Koo, Hyun Cheol; Yi, Hyunjung; Song, J. D.; Chang, Joonyeon; Han, S. H.

In: Solid-State Electronics, Vol. 50, No. 11-12, 01.11.2006, p. 1682-1686.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Yi, Hyunjung ; Song, J. D. ; Chang, Joonyeon ; Han, S. H. / Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system. In: Solid-State Electronics. 2006 ; Vol. 50, No. 11-12. pp. 1682-1686.
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