Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this article, we present a transposable three-transistor static random access memory (3T-SRAM) array consisting of independent double-gate feedback field-effect transistors as binary synaptic devices and access transistors. The synaptic functions of the 2×2 SRAM array are investigated through mixed-mode technology computer-aided design simulations. This 3T-SRAM array provides parallel and bidirectional synaptic updates with fast operating speed. Furthermore, a simplified spike-timing-dependent plasticity learning rule is implemented by adjusting the widths of memory pulses. A compact cell area and a low-leakage power consumption allow this 3T-SRAM array to be used for adaptive synaptic devices in a large-scale neuromorphic system.

Original languageEnglish
Article number8836627
Pages (from-to)4753-4758
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number11
DOIs
Publication statusPublished - 2019 Nov

Keywords

  • Double-gate
  • feedback field-effect transistors (FBFETs)
  • static random access memory (SRAM)
  • synapse device
  • transposable memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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