Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

Sola Woo; Jinsun Cho; Doohyeok Lim; Kyoungah Cho; Sangsig Kim

doi:10.1109/TED.2019.2939393

Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors

Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

In this article, we present a transposable three-transistor static random access memory (3T-SRAM) array consisting of independent double-gate feedback field-effect transistors as binary synaptic devices and access transistors. The synaptic functions of the 2×2 SRAM array are investigated through mixed-mode technology computer-aided design simulations. This 3T-SRAM array provides parallel and bidirectional synaptic updates with fast operating speed. Furthermore, a simplified spike-timing-dependent plasticity learning rule is implemented by adjusting the widths of memory pulses. A compact cell area and a low-leakage power consumption allow this 3T-SRAM array to be used for adaptive synaptic devices in a large-scale neuromorphic system.

Original language	English
Article number	8836627
Pages (from-to)	4753-4758
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	11
DOIs	https://doi.org/10.1109/TED.2019.2939393
Publication status	Published - 2019 Nov

Keywords

Double-gate
feedback field-effect transistors (FBFETs)
static random access memory (SRAM)
synapse device
transposable memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Woo, S., Cho, J., Lim, D., Cho, K., & Kim, S. (2019). Transposable 3T-SRAM Synaptic Array Using Independent Double-Gate Feedback Field-Effect Transistors. IEEE Transactions on Electron Devices, 66(11), 4753-4758. [8836627]. https://doi.org/10.1109/TED.2019.2939393

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