Trap distribution and field effect transistor (FET) of perylene by organic molecular beam deposition (OMBD)

T. Y. Choi, H. S. Kang, D. H. Park, J. M. Koo, J. K. Lee, S. D. Ahn, Jinsoo Joo

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Organic semiconducting perylene molecule was deposited as active layer on the FET pattern by using organic molecular beam deposition (OMBD) method. For the morphology and structure, we performed the atomic force microscopy, scanning electron microscopy, and X-ray diffraction experiments. From the I-V characteristics, bulk trap density, trap distribution, and electric field dependent mobility were estimated. Thin film field effect transistor based on perylene molecule was fabricated. From the results of the current modulation with different gate voltages of the FET, gate induced carrier concentration and field effect mobility were obtained. We observed Gaussian-like deep trap distribution, and that mobility was 3 × 10-7 cm2/Vs.

Original languageEnglish
Pages (from-to)929-930
Number of pages2
JournalSynthetic Metals
Issue number1-3
Publication statusPublished - 2003 Apr 4



  • Field effect transistor
  • Mobility
  • Organic molecular beam deposition
  • Perylene

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

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