Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy

Aizhen Li, H. K. Kim, Jichai Jeong, D. Wong, J. H. Zhao, Z. Q. Fang, T. E. Schlesinger, A. G. Milnes

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n-GaAs (100) grown by molecular beam epitaxy (MBE) have been investigated. The dominant hole traps in our Be doped layers are at about Ev+0.56 eV (H4) and may be the HL8 trap (0.52-0.54 eV) reported previously and at Ev+0.29 eV (H2). The concentrations of H4 and H2 are reduced by three orders of magnitude (from 1015 cm-3 for H4, 1014 cm-3 for H2) by increasing the growth temperature from 500 to 600°C. Photocapacitance measurements support the view that this trap is As++Ga and not a trap associated with FeGa. Additions of 0.2% to 2% In or Sb for growths at 500 or 550°C have no effect on the concentration of this anti-site defect trap but cause a considerable reduction of the trap at 0.29 eV (H2). The two dominant electron traps M3 (Ec-0.33 eV) and M6 (Ec-0.62 eV) in our n-GaAs layers are drastically reduced in concentration by up to three orders of magnitude by introducing 0.2-1 at % In or Sb and increasing growth temperature from 500 to 600°C. In and Sb appear to have rather similar effects in trap gettering the concentration of the M3, M6 and H2. This suggests that these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes.

Original languageEnglish
Pages (from-to)296-300
Number of pages5
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2
Externally publishedYes

Fingerprint

Hole traps
Electron traps
Growth temperature
Molecular beam epitaxy
molecular beam epitaxy
Doping (additives)
traps
Defects
gallium arsenide
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy. / Li, Aizhen; Kim, H. K.; Jeong, Jichai; Wong, D.; Zhao, J. H.; Fang, Z. Q.; Schlesinger, T. E.; Milnes, A. G.

In: Journal of Crystal Growth, Vol. 95, No. 1-4, 02.02.1989, p. 296-300.

Research output: Contribution to journalArticle

Li, A, Kim, HK, Jeong, J, Wong, D, Zhao, JH, Fang, ZQ, Schlesinger, TE & Milnes, AG 1989, 'Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy', Journal of Crystal Growth, vol. 95, no. 1-4, pp. 296-300. https://doi.org/10.1016/0022-0248(89)90405-3
Li, Aizhen ; Kim, H. K. ; Jeong, Jichai ; Wong, D. ; Zhao, J. H. ; Fang, Z. Q. ; Schlesinger, T. E. ; Milnes, A. G. / Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy. In: Journal of Crystal Growth. 1989 ; Vol. 95, No. 1-4. pp. 296-300.
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abstract = "The effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n-GaAs (100) grown by molecular beam epitaxy (MBE) have been investigated. The dominant hole traps in our Be doped layers are at about Ev+0.56 eV (H4) and may be the HL8 trap (0.52-0.54 eV) reported previously and at Ev+0.29 eV (H2). The concentrations of H4 and H2 are reduced by three orders of magnitude (from 1015 cm-3 for H4, 1014 cm-3 for H2) by increasing the growth temperature from 500 to 600°C. Photocapacitance measurements support the view that this trap is As++Ga and not a trap associated with FeGa. Additions of 0.2{\%} to 2{\%} In or Sb for growths at 500 or 550°C have no effect on the concentration of this anti-site defect trap but cause a considerable reduction of the trap at 0.29 eV (H2). The two dominant electron traps M3 (Ec-0.33 eV) and M6 (Ec-0.62 eV) in our n-GaAs layers are drastically reduced in concentration by up to three orders of magnitude by introducing 0.2-1 at {\%} In or Sb and increasing growth temperature from 500 to 600°C. In and Sb appear to have rather similar effects in trap gettering the concentration of the M3, M6 and H2. This suggests that these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes.",
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AU - Li, Aizhen

AU - Kim, H. K.

AU - Jeong, Jichai

AU - Wong, D.

AU - Zhao, J. H.

AU - Fang, Z. Q.

AU - Schlesinger, T. E.

AU - Milnes, A. G.

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N2 - The effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n-GaAs (100) grown by molecular beam epitaxy (MBE) have been investigated. The dominant hole traps in our Be doped layers are at about Ev+0.56 eV (H4) and may be the HL8 trap (0.52-0.54 eV) reported previously and at Ev+0.29 eV (H2). The concentrations of H4 and H2 are reduced by three orders of magnitude (from 1015 cm-3 for H4, 1014 cm-3 for H2) by increasing the growth temperature from 500 to 600°C. Photocapacitance measurements support the view that this trap is As++Ga and not a trap associated with FeGa. Additions of 0.2% to 2% In or Sb for growths at 500 or 550°C have no effect on the concentration of this anti-site defect trap but cause a considerable reduction of the trap at 0.29 eV (H2). The two dominant electron traps M3 (Ec-0.33 eV) and M6 (Ec-0.62 eV) in our n-GaAs layers are drastically reduced in concentration by up to three orders of magnitude by introducing 0.2-1 at % In or Sb and increasing growth temperature from 500 to 600°C. In and Sb appear to have rather similar effects in trap gettering the concentration of the M3, M6 and H2. This suggests that these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes.

AB - The effects of isoelectronic In and Sb doping on the hole traps in Be-doped p-GaAs and electron traps in Si-doped n-GaAs (100) grown by molecular beam epitaxy (MBE) have been investigated. The dominant hole traps in our Be doped layers are at about Ev+0.56 eV (H4) and may be the HL8 trap (0.52-0.54 eV) reported previously and at Ev+0.29 eV (H2). The concentrations of H4 and H2 are reduced by three orders of magnitude (from 1015 cm-3 for H4, 1014 cm-3 for H2) by increasing the growth temperature from 500 to 600°C. Photocapacitance measurements support the view that this trap is As++Ga and not a trap associated with FeGa. Additions of 0.2% to 2% In or Sb for growths at 500 or 550°C have no effect on the concentration of this anti-site defect trap but cause a considerable reduction of the trap at 0.29 eV (H2). The two dominant electron traps M3 (Ec-0.33 eV) and M6 (Ec-0.62 eV) in our n-GaAs layers are drastically reduced in concentration by up to three orders of magnitude by introducing 0.2-1 at % In or Sb and increasing growth temperature from 500 to 600°C. In and Sb appear to have rather similar effects in trap gettering the concentration of the M3, M6 and H2. This suggests that these traps are in some way related to (VAsVGa) complexes or (VAsXVGa) complexes.

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