Triangular GaN-BN core-shell nanocables: Synthesis and field emission

Woo Sung Jang, Shin Young Kim, Jinyoung Lee, Jeunghee Park, Chan Jun Park, Cheol Jin Lee

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Triangular GaN-BN core-shell nanocables were synthesized by thermal chemical vapor deposition using GaN/B2O3/NH3 reaction. They consist of single-crystalline wurtzite GaN nanowires (avg. diameter = 60 nm), grown along the [0 1 0] direction, and 3 nm-thick crystalline h-BN outerlayers. The h-BN outerlayers lead to superhydrophobicity, and probably reduce the surface defects of GaN nanowires. Field emission from as-grown GaN-BN nanocables shows large current densities and low turn-on voltages, which are comparable to those of bare GaN nanowires.

Original languageEnglish
Pages (from-to)41-45
Number of pages5
JournalChemical Physics Letters
Volume422
Issue number1-3
DOIs
Publication statusPublished - 2006 Apr 28

Fingerprint

Field emission
Nanowires
field emission
nanowires
synthesis
Crystalline materials
Surface defects
surface defects
wurtzite
Chemical vapor deposition
Current density
vapor deposition
current density
Electric potential
electric potential
Hot Temperature
Direction compound
boron oxide

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Triangular GaN-BN core-shell nanocables : Synthesis and field emission. / Jang, Woo Sung; Kim, Shin Young; Lee, Jinyoung; Park, Jeunghee; Park, Chan Jun; Lee, Cheol Jin.

In: Chemical Physics Letters, Vol. 422, No. 1-3, 28.04.2006, p. 41-45.

Research output: Contribution to journalArticle

Jang, Woo Sung ; Kim, Shin Young ; Lee, Jinyoung ; Park, Jeunghee ; Park, Chan Jun ; Lee, Cheol Jin. / Triangular GaN-BN core-shell nanocables : Synthesis and field emission. In: Chemical Physics Letters. 2006 ; Vol. 422, No. 1-3. pp. 41-45.
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