Triethanolamine doped multilayer MoS2 field effect transistors

Min Yeul Ryu, Ho Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung Pil Ko, Minju Shin, Junghwan Huh, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm2 V-1 s-1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.

Original languageEnglish
Pages (from-to)13133-13139
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume19
Issue number20
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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