Triethanolamine doped multilayer MoS2 field effect transistors

Min Yeul Ryu, Ho Kyun Jang, Kook Jin Lee, Mingxing Piao, Seung Pil Ko, Minju Shin, Junghwan Huh, Gyu-Tae Kim

Research output: Contribution to journalArticle

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Abstract

Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm2 V-1 s-1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.

Original languageEnglish
Pages (from-to)13133-13139
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume19
Issue number20
DOIs
Publication statusPublished - 2017

Fingerprint

Field effect transistors
Multilayers
field effect transistors
Doping (additives)
Hot Temperature
Ions
Equipment and Supplies
Temperature
molybdenum disulfides
triethanolamine
contact resistance
Contact resistance
ion implantation
Ion implantation
heat treatment
electrical properties
Electric properties
Heat treatment
augmentation
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Ryu, M. Y., Jang, H. K., Lee, K. J., Piao, M., Ko, S. P., Shin, M., ... Kim, G-T. (2017). Triethanolamine doped multilayer MoS2 field effect transistors. Physical Chemistry Chemical Physics, 19(20), 13133-13139. https://doi.org/10.1039/c7cp00589j

Triethanolamine doped multilayer MoS2 field effect transistors. / Ryu, Min Yeul; Jang, Ho Kyun; Lee, Kook Jin; Piao, Mingxing; Ko, Seung Pil; Shin, Minju; Huh, Junghwan; Kim, Gyu-Tae.

In: Physical Chemistry Chemical Physics, Vol. 19, No. 20, 2017, p. 13133-13139.

Research output: Contribution to journalArticle

Ryu, MY, Jang, HK, Lee, KJ, Piao, M, Ko, SP, Shin, M, Huh, J & Kim, G-T 2017, 'Triethanolamine doped multilayer MoS2 field effect transistors', Physical Chemistry Chemical Physics, vol. 19, no. 20, pp. 13133-13139. https://doi.org/10.1039/c7cp00589j
Ryu, Min Yeul ; Jang, Ho Kyun ; Lee, Kook Jin ; Piao, Mingxing ; Ko, Seung Pil ; Shin, Minju ; Huh, Junghwan ; Kim, Gyu-Tae. / Triethanolamine doped multilayer MoS2 field effect transistors. In: Physical Chemistry Chemical Physics. 2017 ; Vol. 19, No. 20. pp. 13133-13139.
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