Tunable control over the ionization state of single mn acceptors in GaAs with defect-induced band bending

Donghun Lee, Jay A. Gupta

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

A scanning tunneling microscope was used to study the ionization of single Mn acceptors in GaAs(110). The ionization state switches when the GaAs valence band is bent across a Mn acceptor level. This produces a ringlike feature in STM images, whose diameter depends on the tunneling conditions and distance to charged arsenic vacancies. By varying the latter, we could tune the ionization switching, as well as quantify the contributions from tip- and vacancy-induced band bending.

Original languageEnglish
Pages (from-to)2004-2007
Number of pages4
JournalNano Letters
Volume11
Issue number5
DOIs
Publication statusPublished - 2011 May 11
Externally publishedYes

Fingerprint

Ionization
ionization
Defects
Vacancies
defects
Arsenic
Valence bands
arsenic
Microscopes
switches
microscopes
Switches
Scanning
valence
scanning
gallium arsenide

Keywords

  • dopants in semiconductors
  • ionization
  • Scanning tunneling microscopy
  • scanning tunneling spectroscopy

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Tunable control over the ionization state of single mn acceptors in GaAs with defect-induced band bending. / Lee, Donghun; Gupta, Jay A.

In: Nano Letters, Vol. 11, No. 5, 11.05.2011, p. 2004-2007.

Research output: Contribution to journalArticle

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