Tunable polarization of spin polarized current by magnetic field

Sungjung Joo, Jinseo Lee, Taeyueb Kim, Kungwon Rhie, Jinki Hong, Kyung Ho Shin, Ki Hyun Kim

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The spin polarization of a high g-factor bulk semiconductor is theoretically investigated in the presence of a magnetic field parallel to a driving electric field. Calculations have been carried out using the energy-dependent relaxation time approximation in association with spin-flip scattering. As the magnitude of the magnetic field increases, the spin-polarized current alternates between the spin-up and spin-down states for the low spin-scattering system. This implies that the current polarization can be tuned by controlling the magnetic field strength, suggesting possible applications to spintronic devices. An experimental method for investigating alternative current polarization is also considered.

Original languageEnglish
Pages (from-to)568-572
Number of pages5
JournalCurrent Applied Physics
Issue number3
Publication statusPublished - 2011 May
Externally publishedYes


  • HgCdTe
  • Spin polarization
  • Spin-flip
  • Zeeman
  • g-factor

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Tunable polarization of spin polarized current by magnetic field'. Together they form a unique fingerprint.

Cite this