Tunable polarization of spin polarized current by magnetic field

Sungjung Joo, Jinseo Lee, Taeyueb Kim, Kungwon Rhie, Jinki Hong, Kyung Ho Shin, Kihyun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The spin polarization of a high g-factor bulk semiconductor is theoretically investigated in the presence of a magnetic field parallel to a driving electric field. Calculations have been carried out using the energy-dependent relaxation time approximation in association with spin-flip scattering. As the magnitude of the magnetic field increases, the spin-polarized current alternates between the spin-up and spin-down states for the low spin-scattering system. This implies that the current polarization can be tuned by controlling the magnetic field strength, suggesting possible applications to spintronic devices. An experimental method for investigating alternative current polarization is also considered.

Original languageEnglish
Pages (from-to)568-572
Number of pages5
JournalCurrent Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 May 1
Externally publishedYes

    Fingerprint

Keywords

  • g-factor
  • HgCdTe
  • Spin polarization
  • Spin-flip
  • Zeeman

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this