Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices

Sang Hoon Lee, D. Y. Shin, S. J. Chung, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The authors show that staggered asymmetric planar Hall resistance (PHR) loops observed in GaMnAs ferromagnetic semiconductor films with biaxial in-plane magnetic anisotropy result in four stable resistance states at zero magnetic field owing to the formation of a stable multidomain structure during magnetization reversal. The values of PHR can be systematically controlled by changing the direction and the scanning range of the applied magnetic field. The possibility of a quaternary memory device based on the observed four PHR states is demonstrated by obtaining consistent results in the writing process using appropriate sequences of magnetic field pulses.

Original languageEnglish
Article number152113
JournalApplied Physics Letters
Volume90
Issue number15
DOIs
Publication statusPublished - 2007 Apr 24

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Hall resistance
magnetic fields
magnetization
anisotropy
scanning
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices. / Lee, Sang Hoon; Shin, D. Y.; Chung, S. J.; Liu, X.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 90, No. 15, 152113, 24.04.2007.

Research output: Contribution to journalArticle

Lee, Sang Hoon ; Shin, D. Y. ; Chung, S. J. ; Liu, X. ; Furdyna, J. K. / Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices. In: Applied Physics Letters. 2007 ; Vol. 90, No. 15.
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