Abstract
The authors show that staggered asymmetric planar Hall resistance (PHR) loops observed in GaMnAs ferromagnetic semiconductor films with biaxial in-plane magnetic anisotropy result in four stable resistance states at zero magnetic field owing to the formation of a stable multidomain structure during magnetization reversal. The values of PHR can be systematically controlled by changing the direction and the scanning range of the applied magnetic field. The possibility of a quaternary memory device based on the observed four PHR states is demonstrated by obtaining consistent results in the writing process using appropriate sequences of magnetic field pulses.
Original language | English |
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Article number | 152113 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)