Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation

Woong Ki Hong, Gunho Jo, Jung Inn Sohn, Woojin Park, Minhyeok Choe, Gunuk Wang, Yung Ho Kahng, Mark E. Welland, Takhee Lee

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO2 and at the SiO2/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Original languageEnglish
Pages (from-to)811-818
Number of pages8
JournalACS nano
Volume4
Issue number2
DOIs
Publication statusPublished - 2010 Feb 23

Keywords

  • Electronic transport
  • Field effect transistors
  • Proton irradiation
  • Semiconductor nanowires
  • ZnO nanowires

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Hong, W. K., Jo, G., Sohn, J. I., Park, W., Choe, M., Wang, G., Kahng, Y. H., Welland, M. E., & Lee, T. (2010). Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation. ACS nano, 4(2), 811-818. https://doi.org/10.1021/nn9014246