Tuning the dielectric properties of organic semiconductors via salt doping

Xien Liu, Kwang Seob Jeong, Bryan P. Williams, Kiarash Vakhshouri, Changhe Guo, Kuo Han, Enrique D. Gomez, Qing Wang, John B. Asbury

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Enhancing the dielectric permittivity of organic semiconductors may open new opportunities to control charge generation and recombination dynamics in organic solar cells. The potential to tune the dielectric permittivity of organic semiconductors by doping them with redox inactive salts was explored using a combination of organic synthesis, electrical characterization, and time-resolved infrared spectroscopy. The addition of the salt, LiTFSI (lithium bis(trifluoro-methyl-sulfonyl)imide), to a conjugated polymer specifically designed to incorporate ions into its bulk phase increased the density of holes and enhanced the static dielectric permittivity of the polymer blend by more than an order of magnitude. The frequency and phase dependence of the real dielectric function demonstrates that the increase in dielectric permittivity resulted from dipolar motion of bound ion pairs or clusters of ions. Interestingly, the increases in the hole density and dielectric permittivity were associated with enhancement of the hole mobility by 2 orders of magnitude relative to the undoped polymer. The charge recombination lifetime also increased by an order of magnitude in the blend with a fullerene electron acceptor when ions were added to the polymer. The findings indicate that ion doping enables organic semiconductors with large increases in low frequency dielectric permittivity and that these changes result in improved charge transport and suppressed charge recombination on the microsecond time scale.

Original languageEnglish
Pages (from-to)15866-15874
Number of pages9
JournalJournal of Physical Chemistry B
Volume117
Issue number49
DOIs
Publication statusPublished - 2013 Dec 12
Externally publishedYes

Fingerprint

Semiconductors
Semiconducting organic compounds
organic semiconductors
Dielectric properties
dielectric properties
Tuning
Salts
tuning
Doping (additives)
Ions
Permittivity
salts
Polymers
permittivity
Genetic Recombination
ions
Imides
Fullerenes
Synthetic Chemistry Techniques
polymers

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physical and Theoretical Chemistry
  • Materials Chemistry

Cite this

Liu, X., Jeong, K. S., Williams, B. P., Vakhshouri, K., Guo, C., Han, K., ... Asbury, J. B. (2013). Tuning the dielectric properties of organic semiconductors via salt doping. Journal of Physical Chemistry B, 117(49), 15866-15874. https://doi.org/10.1021/jp408537p

Tuning the dielectric properties of organic semiconductors via salt doping. / Liu, Xien; Jeong, Kwang Seob; Williams, Bryan P.; Vakhshouri, Kiarash; Guo, Changhe; Han, Kuo; Gomez, Enrique D.; Wang, Qing; Asbury, John B.

In: Journal of Physical Chemistry B, Vol. 117, No. 49, 12.12.2013, p. 15866-15874.

Research output: Contribution to journalArticle

Liu, X, Jeong, KS, Williams, BP, Vakhshouri, K, Guo, C, Han, K, Gomez, ED, Wang, Q & Asbury, JB 2013, 'Tuning the dielectric properties of organic semiconductors via salt doping', Journal of Physical Chemistry B, vol. 117, no. 49, pp. 15866-15874. https://doi.org/10.1021/jp408537p
Liu, Xien ; Jeong, Kwang Seob ; Williams, Bryan P. ; Vakhshouri, Kiarash ; Guo, Changhe ; Han, Kuo ; Gomez, Enrique D. ; Wang, Qing ; Asbury, John B. / Tuning the dielectric properties of organic semiconductors via salt doping. In: Journal of Physical Chemistry B. 2013 ; Vol. 117, No. 49. pp. 15866-15874.
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