Tuning the electronic states of individual Co acceptors in GaAs

Anne L. Benjamin, Donghun Lee, Jay A. Gupta

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Scanning tunneling microscope studies of individual impurities in semiconductors explore challenges associated with future nanoscale electronics and can provide insight into how new materials properties such as ferromagnetic ordering arise from impurity interactions. Atomic manipulation and tunneling spectroscopy were employed to characterize and control the acceptor states of Co atoms substituted for Ga in the GaAs(110) surface. Three states were observed whose appearance in tunneling spectra was sensitive to the tip position within the acceptor complex. The energy of these states did not follow bending of the host bands due to the tip-induced electric field, but did respond to the Coulomb potential of nearby charged defects, such as As vacancies. By applying voltage pulses with the scanning tunneling microscope tip, the vacancies could be positioned on the surface, thus enabling tunable control over the Co acceptor states.

Original languageEnglish
Article number04D102
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number4
DOIs
Publication statusPublished - 2013 Jul 1
Externally publishedYes

Fingerprint

Electronic states
Vacancies
Microscopes
Tuning
tuning
Impurities
Scanning
electronics
Materials properties
Electronic equipment
microscopes
Electric fields
Spectroscopy
Semiconductor materials
impurities
Atoms
Defects
scanning
Electric potential
Coulomb potential

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Tuning the electronic states of individual Co acceptors in GaAs. / Benjamin, Anne L.; Lee, Donghun; Gupta, Jay A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 4, 04D102, 01.07.2013.

Research output: Contribution to journalArticle

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