Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors

Dae Young Jeon, Deuk Hyeon Nam, Dong Su Lee, Seoung Ki Lee, Min Park, So Jeong Park, Gyu Tae Kim

Research output: Contribution to journalArticle

Abstract

Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.

Original languageEnglish
Article number275104
JournalJournal of Physics D: Applied Physics
Volume53
Issue number27
DOIs
Publication statusPublished - 2020 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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