TY - JOUR
T1 - Tuning the threshold voltage of exfoliated β-Ga 2 O 3 flake-based field-effect transistors by photo-enhanced H 3 PO 4 wet etching
AU - Son, Jongha
AU - Kwon, Yongbeom
AU - Kim, Janghyuk
AU - Kim, Jihyun
N1 - Funding Information:
The research at Korea University was supported by the New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning (KETEP), and financial support was granted from the Ministry of Trade, Industry & Energy, Korea (Nos. 20173010012970 and 20172010104830).
PY - 2018
Y1 - 2018
N2 - Monoclinic β-Ga 2 O 3 with an ultra-wide energy bandgap of ∼4.9 eV has facile cleavage planes because of the high anisotropy in the lattice structure. An exfoliated nanolayer flake of β-Ga 2 O 3 can be used as an active channel layer in nanoelectronics. However, the mechanical exfoliation method used poses a fundamental issue in that the separated individual layer has a random thickness, which makes it challenging to obtain reproducible device performance. In our study, we demonstrated a photo-enhanced chemical etching technique to control the thickness of exfoliated β-Ga 2 O 3 nanolayers, enabling us to adjust the threshold voltage of field-effect transistors (FETs) based on these nanolayers. Thickness-dependent device characteristics (threshold voltage, subthreshold swing, on/off ratio, and field-effect mobility) of the back-gated FETs were investigated as a function of the active channel layer (β-Ga 2 O 3 ) thickness achieved by the photo-enhanced H 3 PO 4 etching. Our study paves the way for the implementation of exfoliated β-Ga 2 O 3 nanolayers in nanoelectronics.
AB - Monoclinic β-Ga 2 O 3 with an ultra-wide energy bandgap of ∼4.9 eV has facile cleavage planes because of the high anisotropy in the lattice structure. An exfoliated nanolayer flake of β-Ga 2 O 3 can be used as an active channel layer in nanoelectronics. However, the mechanical exfoliation method used poses a fundamental issue in that the separated individual layer has a random thickness, which makes it challenging to obtain reproducible device performance. In our study, we demonstrated a photo-enhanced chemical etching technique to control the thickness of exfoliated β-Ga 2 O 3 nanolayers, enabling us to adjust the threshold voltage of field-effect transistors (FETs) based on these nanolayers. Thickness-dependent device characteristics (threshold voltage, subthreshold swing, on/off ratio, and field-effect mobility) of the back-gated FETs were investigated as a function of the active channel layer (β-Ga 2 O 3 ) thickness achieved by the photo-enhanced H 3 PO 4 etching. Our study paves the way for the implementation of exfoliated β-Ga 2 O 3 nanolayers in nanoelectronics.
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U2 - 10.1149/2.0211808jss
DO - 10.1149/2.0211808jss
M3 - Article
AN - SCOPUS:85057802433
VL - 7
SP - Q148-Q151
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 8
ER -