Abstract
By monitoring the intensity of the weak Raman peak from the Si substrate, the transmittance of the multi-layer structure could be deduced. Since the samples are identical, except for the thickness of the top aluminum layer, any difference in the intensity of the Si Raman peak is due to the difference in the transmittance of the top aluminum (oxide) layer. It was found that the intensity decreases monotonically with the aluminum layer thickness, which means that there is a substantial underoxidation. Furthermore, the intensity for the 1.6 nm sample is measurably lower than that for the 0.8 nm sample, which indicates that even the "optimized" 1.6 nm sample may have some degree of under-oxidation. This work demonstrates that Raman spectroscopy could be a useful tool in probing the oxidation state of the aluminum oxide tunnel barriers.
| Original language | English |
|---|---|
| Pages (from-to) | 1684-1687 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 201 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2004 Jun 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Tunnel barrier's property in magnetic tunnel junctions probed by Raman spectroscopy. / Jeon, Y. J.; Cheong, H.; Chun, B. S.; Lee, Seong Rae; Kim, Young-geun.
In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 8, 01.06.2004, p. 1684-1687.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Tunnel barrier's property in magnetic tunnel junctions probed by Raman spectroscopy
AU - Jeon, Y. J.
AU - Cheong, H.
AU - Chun, B. S.
AU - Lee, Seong Rae
AU - Kim, Young-geun
PY - 2004/6/1
Y1 - 2004/6/1
N2 - By monitoring the intensity of the weak Raman peak from the Si substrate, the transmittance of the multi-layer structure could be deduced. Since the samples are identical, except for the thickness of the top aluminum layer, any difference in the intensity of the Si Raman peak is due to the difference in the transmittance of the top aluminum (oxide) layer. It was found that the intensity decreases monotonically with the aluminum layer thickness, which means that there is a substantial underoxidation. Furthermore, the intensity for the 1.6 nm sample is measurably lower than that for the 0.8 nm sample, which indicates that even the "optimized" 1.6 nm sample may have some degree of under-oxidation. This work demonstrates that Raman spectroscopy could be a useful tool in probing the oxidation state of the aluminum oxide tunnel barriers.
AB - By monitoring the intensity of the weak Raman peak from the Si substrate, the transmittance of the multi-layer structure could be deduced. Since the samples are identical, except for the thickness of the top aluminum layer, any difference in the intensity of the Si Raman peak is due to the difference in the transmittance of the top aluminum (oxide) layer. It was found that the intensity decreases monotonically with the aluminum layer thickness, which means that there is a substantial underoxidation. Furthermore, the intensity for the 1.6 nm sample is measurably lower than that for the 0.8 nm sample, which indicates that even the "optimized" 1.6 nm sample may have some degree of under-oxidation. This work demonstrates that Raman spectroscopy could be a useful tool in probing the oxidation state of the aluminum oxide tunnel barriers.
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U2 - 10.1002/pssa.200304603
DO - 10.1002/pssa.200304603
M3 - Article
AN - SCOPUS:3142710978
VL - 201
SP - 1684
EP - 1687
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 8
ER -