Tunnel oxide passivating electron contacts for high-efficiency n-type silicon solar cells with amorphous silicon passivating hole contacts

Hyun Jung Park, Youngseok Lee, Se Jin Park, Soohyun Bae, Sangho Kim, Donghyun Oh, Jinjoo Park, Youngkuk Kim, Hwanuk Guim, Yoonmook Kang, Hae Seok Lee, Donghwan Kim, Junsin Yi

Research output: Contribution to journalArticle

Abstract

This study proposes a hybrid solar cell structure for a highly efficient silicon solar cell obtained by combining two passivating contact structures, namely, a heterojunction and polysilicon passivating contact. Given that the major cause of the loss in efficiency of crystalline silicon solar cells is carrier recombination at the metal-semiconductor junction, a passivating contact having high-quality passivation and a low contact resistance was introduced. In this study, two major passivating contact solar cells were combined. By applying an intrinsic thin amorphous silicon layer at the front and a tunneling oxide at the rear, a hybrid silicon solar cell with an efficiency of 21.8% was fabricated. Moreover, to evaluate the potential efficiency limit and to suggest methods for improving the cell performance of the proposed amorphous silicon emitter tunnel oxide back contact structure, the cell efficiency was simulated, and the result indicated that an efficiency of 26% could be achieved by controlling the thickness and resistivity of the wafer.

Original languageEnglish
Pages (from-to)1104-1114
Number of pages11
JournalProgress in Photovoltaics: Research and Applications
Volume27
Issue number12
DOIs
Publication statusPublished - 2019 Dec 1

Keywords

  • heterojunction
  • high efficiency
  • hybrid
  • passivating contact
  • silicon solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Tunnel oxide passivating electron contacts for high-efficiency n-type silicon solar cells with amorphous silicon passivating hole contacts. / Park, Hyun Jung; Lee, Youngseok; Park, Se Jin; Bae, Soohyun; Kim, Sangho; Oh, Donghyun; Park, Jinjoo; Kim, Youngkuk; Guim, Hwanuk; Kang, Yoonmook; Lee, Hae Seok; Kim, Donghwan; Yi, Junsin.

In: Progress in Photovoltaics: Research and Applications, Vol. 27, No. 12, 01.12.2019, p. 1104-1114.

Research output: Contribution to journalArticle

Park, Hyun Jung ; Lee, Youngseok ; Park, Se Jin ; Bae, Soohyun ; Kim, Sangho ; Oh, Donghyun ; Park, Jinjoo ; Kim, Youngkuk ; Guim, Hwanuk ; Kang, Yoonmook ; Lee, Hae Seok ; Kim, Donghwan ; Yi, Junsin. / Tunnel oxide passivating electron contacts for high-efficiency n-type silicon solar cells with amorphous silicon passivating hole contacts. In: Progress in Photovoltaics: Research and Applications. 2019 ; Vol. 27, No. 12. pp. 1104-1114.
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AU - Kim, Sangho

AU - Oh, Donghyun

AU - Park, Jinjoo

AU - Kim, Youngkuk

AU - Guim, Hwanuk

AU - Kang, Yoonmook

AU - Lee, Hae Seok

AU - Kim, Donghwan

AU - Yi, Junsin

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AB - This study proposes a hybrid solar cell structure for a highly efficient silicon solar cell obtained by combining two passivating contact structures, namely, a heterojunction and polysilicon passivating contact. Given that the major cause of the loss in efficiency of crystalline silicon solar cells is carrier recombination at the metal-semiconductor junction, a passivating contact having high-quality passivation and a low contact resistance was introduced. In this study, two major passivating contact solar cells were combined. By applying an intrinsic thin amorphous silicon layer at the front and a tunneling oxide at the rear, a hybrid silicon solar cell with an efficiency of 21.8% was fabricated. Moreover, to evaluate the potential efficiency limit and to suggest methods for improving the cell performance of the proposed amorphous silicon emitter tunnel oxide back contact structure, the cell efficiency was simulated, and the result indicated that an efficiency of 26% could be achieved by controlling the thickness and resistivity of the wafer.

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