Abstract
Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
| Original language | English |
|---|---|
| Article number | 212404 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Yoo, T., Khym, S., Lee, H., Lee, S., Lee, S., Liu, X., Furdyna, J. K., Lee, D. U., & Kyu Kim, E. (2013). Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions. Applied Physics Letters, 102(21), [212404]. https://doi.org/10.1063/1.4807846