Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

Taehee Yoo, Sungwon Khym, Hakjoon Lee, Sangyeop Lee, Sang Hoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

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Abstract

Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.

Original languageEnglish
Article number212404
JournalApplied Physics Letters
Volume102
Issue number21
DOIs
Publication statusPublished - 2013 Jun 24

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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