Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

Taehee Yoo; Sungwon Khym; Hakjoon Lee; Sangyeop Lee; Sanghoon Lee; Xinyu Liu; Jacek K. Furdyna; Dong Uk Lee; Eun Kyu Kim

doi:10.1063/1.4807846

Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

Taehee Yoo, Sungwon Khym, Hakjoon Lee, Sangyeop Lee, Sanghoon Lee, Xinyu Liu, Jacek K. Furdyna, Dong Uk Lee, Eun Kyu Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.

Original language	English
Article number	212404
Journal	Applied Physics Letters
Volume	102
Issue number	21
DOIs	https://doi.org/10.1063/1.4807846
Publication status	Published - 2013 May 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4807846

Cite this

@article{bd3cb76ac0e24fa683d3b28a0c53bb64,

title = "Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions",

abstract = "Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.",

author = "Taehee Yoo and Sungwon Khym and Hakjoon Lee and Sangyeop Lee and Sanghoon Lee and Xinyu Liu and Furdyna, {Jacek K.} and Lee, {Dong Uk} and {Kyu Kim}, Eun",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244), by the National Research Foundation of Korea (NRF) grant funded by the Government of Korea (MEST; No. 2012-045434), and by the National Science Foundation Grant DMR10-05851.",

year = "2013",

month = may,

day = "27",

doi = "10.1063/1.4807846",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

AU - Yoo, Taehee

AU - Khym, Sungwon

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Lee, Dong Uk

AU - Kyu Kim, Eun

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244), by the National Research Foundation of Korea (NRF) grant funded by the Government of Korea (MEST; No. 2012-045434), and by the National Science Foundation Grant DMR10-05851.

PY - 2013/5/27

Y1 - 2013/5/27

N2 - Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.

AB - Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84879099140&partnerID=8YFLogxK

U2 - 10.1063/1.4807846

DO - 10.1063/1.4807846

M3 - Article

AN - SCOPUS:84879099140

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 212404

ER -

Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this