Abstract
Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
| Original language | English |
|---|---|
| Article number | 212404 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2013 Jun 24 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions. / Yoo, Taehee; Khym, Sungwon; Lee, Hakjoon; Lee, Sangyeop; Lee, Sang Hoon; Liu, Xinyu; Furdyna, Jacek K.; Lee, Dong Uk; Kyu Kim, Eun.
In: Applied Physics Letters, Vol. 102, No. 21, 212404, 24.06.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Tunneling magnetoresistance from non-collinear alignment of magnetization in Fe/GaAlAs/GaMnAs magnetic tunnel junctions
AU - Yoo, Taehee
AU - Khym, Sungwon
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Lee, Sang Hoon
AU - Liu, Xinyu
AU - Furdyna, Jacek K.
AU - Lee, Dong Uk
AU - Kyu Kim, Eun
PY - 2013/6/24
Y1 - 2013/6/24
N2 - Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
AB - Tunneling magnetoresistance (TMR) observed in Fe/GaAlAs/GaMnAs magnetic tunnel junctions depends strongly on relative configuration of magnetizations in the GaMnAs and Fe layers. Using a series of field orientations, we show that non-collinear alignments of magnetization in this structure occur when the magnetic field is applied away from the easy axes of the magnetic layers; and we find that the values of TMR observed for non-collinear spin configurations are very different from those of collinear configurations. The observed behavior suggests the possibility of using this effect for multivalued magnetic memory devices.
UR - http://www.scopus.com/inward/record.url?scp=84879099140&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879099140&partnerID=8YFLogxK
U2 - 10.1063/1.4807846
DO - 10.1063/1.4807846
M3 - Article
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 212404
ER -