Two 320 GHz signal sources based on SiGe HBT technology

Jongwon Yun, Daekeun Yoon, Seungyoon Jung, Mehmet Kaynak, Bernd Tillack, Jae-Sung Rieh

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a Gm-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of -6.3 dBm and a phase noise of -96.6 dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and -94.7 dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.

Original languageEnglish
Article number7027248
Pages (from-to)178-180
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume25
Issue number3
DOIs
Publication statusPublished - 2015 Mar 1

Keywords

  • Heterojunction bipolar transistors (HBTs)
  • multiplying circuits
  • oscillators
  • signal generators
  • silicon germanium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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