Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells

Chel Jong Choi, Jin Sung Kim, Kyungwon Moon, Yeon Ho Kil, Young Woo Ok, Ajeet Rohatgi, Sung Eun Park, Dong Hwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages2858-2860
Number of pages3
DOIs
Publication statusPublished - 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 2011 Jun 192011 Jun 24

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period11/6/1911/6/24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Choi, C. J., Kim, J. S., Moon, K., Kil, Y. H., Ok, Y. W., Rohatgi, A., Park, S. E., & Kim, D. H. (2011). Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2858-2860). [6186542] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186542