Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells

Chel Jong Choi; Jin Sung Kim; Kyungwon Moon; Yeon Ho Kil; Young Woo Ok; Ajeet Rohatgi; Sung Eun Park; Dong Hwan Kim

doi:10.1109/PVSC.2011.6186542

Two-dimensional dopant profiling in POCl ₃-diffused n+ emitter of textured silicon solar cells

Chel Jong Choi, Jin Sung Kim, Kyungwon Moon, Yeon Ho Kil, Young Woo Ok, Ajeet Rohatgi, Sung Eun Park, Dong Hwan Kim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We investigated two-dimensional dopant distribution in POCl ₃-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original language	English
Title of host publication	Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages	2858-2860
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2011.6186542
Publication status	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 2011 Jun 19 → 2011 Jun 24

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	11/6/19 → 11/6/24

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2011.6186542

Cite this

Choi, C. J., Kim, J. S., Moon, K., Kil, Y. H., Ok, Y. W., Rohatgi, A., Park, S. E., & Kim, D. H. (2011). Two-dimensional dopant profiling in POCl ₃-diffused n+ emitter of textured silicon solar cells. In Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 (pp. 2858-2860). [6186542] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2011.6186542

Two-dimensional dopant profiling in POCl ₃-diffused n+ emitter of textured silicon solar cells. / Choi, Chel Jong; Kim, Jin Sung; Moon, Kyungwon et al.

Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011. 2011. p. 2858-2860 6186542 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Choi, CJ, Kim, JS, Moon, K, Kil, YH, Ok, YW, Rohatgi, A, Park, SE & Kim, DH 2011, Two-dimensional dopant profiling in POCl ₃-diffused n+ emitter of textured silicon solar cells. in Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011., 6186542, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2858-2860, 37th IEEE Photovoltaic Specialists Conference, PVSC 2011, Seattle, WA, United States, 11/6/19. https://doi.org/10.1109/PVSC.2011.6186542

@inproceedings{f55e523465594cdcbf8d6dd703c008aa,

title = "Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells",

abstract = "We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.",

author = "Choi, {Chel Jong} and Kim, {Jin Sung} and Kyungwon Moon and Kil, {Yeon Ho} and Ok, {Young Woo} and Ajeet Rohatgi and Park, {Sung Eun} and Kim, {Dong Hwan}",

year = "2011",

doi = "10.1109/PVSC.2011.6186542",

language = "English",

isbn = "9781424499656",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "2858--2860",

booktitle = "Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011",

note = "37th IEEE Photovoltaic Specialists Conference, PVSC 2011 ; Conference date: 19-06-2011 Through 24-06-2011",

}

TY - GEN

T1 - Two-dimensional dopant profiling in POCl 3-diffused n+ emitter of textured silicon solar cells

AU - Choi, Chel Jong

AU - Kim, Jin Sung

AU - Moon, Kyungwon

AU - Kil, Yeon Ho

AU - Ok, Young Woo

AU - Rohatgi, Ajeet

AU - Park, Sung Eun

AU - Kim, Dong Hwan

PY - 2011

Y1 - 2011

N2 - We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

AB - We investigated two-dimensional dopant distribution in POCl 3-diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependency of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

UR - http://www.scopus.com/inward/record.url?scp=84861047542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861047542&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2011.6186542

DO - 10.1109/PVSC.2011.6186542

M3 - Conference contribution

AN - SCOPUS:84861047542

SN - 9781424499656

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2858

EP - 2860

BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

Y2 - 19 June 2011 through 24 June 2011

ER -