Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking

Sunbin Hwang, Sukjae Jang, Minji Kang, Sukang Bae, Seoung Ki Lee, Jae Min Hong, Sang Hyun Lee, Gunuk Wang, Simone Fabiano, Magnus Berggren, Tae Wook Kim

Research output: Contribution to journalArticle

Abstract

Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.

Original languageEnglish
Pages (from-to)25358-25368
Number of pages11
JournalACS Applied Materials and Interfaces
Volume11
Issue number28
DOIs
Publication statusPublished - 2019 Jun 20

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Ferroelectricity
Data storage equipment
Transistors
Threshold voltage
Ferroelectric materials
Logic circuits
Field effect transistors
Integrated circuits
Permittivity
Electronic equipment
Display devices
Polarization

Keywords

  • bis-FB-N
  • inverter
  • organic ferroelectric memory
  • organic field-effect transistor
  • switchable functions

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking. / Hwang, Sunbin; Jang, Sukjae; Kang, Minji; Bae, Sukang; Lee, Seoung Ki; Hong, Jae Min; Lee, Sang Hyun; Wang, Gunuk; Fabiano, Simone; Berggren, Magnus; Kim, Tae Wook.

In: ACS Applied Materials and Interfaces, Vol. 11, No. 28, 20.06.2019, p. 25358-25368.

Research output: Contribution to journalArticle

Hwang, Sunbin ; Jang, Sukjae ; Kang, Minji ; Bae, Sukang ; Lee, Seoung Ki ; Hong, Jae Min ; Lee, Sang Hyun ; Wang, Gunuk ; Fabiano, Simone ; Berggren, Magnus ; Kim, Tae Wook. / Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking. In: ACS Applied Materials and Interfaces. 2019 ; Vol. 11, No. 28. pp. 25358-25368.
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