Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology

Kyeong Jae Byeon, Eun Ju Hong, Hyoungwon Park, Kyung Min Yoon, Hyun Don Song, Jin Wook Lee, Sun Kyung Kim, Hyun Kyong Cho, Ho Ki Kwon, Heon Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A vertical light-emitting diode (LED) with a chip size of 500 × 500 νm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed on the n-GaN top layer of the vertical LED over the entire area with a diameter of 2 inches. As the result of n-GaN patterning, light output power of the vertical LED with photonic crystals was increased by up to 44% compared to that of the vertical LED without a photonic crystal at a driving current of 1000 mA.

Original languageEnglish
Article number035008
JournalSemiconductor Science and Technology
Volume25
Issue number3
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Byeon, K. J., Hong, E. J., Park, H., Yoon, K. M., Song, H. D., Lee, J. W., Kim, S. K., Cho, H. K., Kwon, H. K., & Lee, H. (2010). Two inch large area patterning on a vertical light-emitting diode by nano-imprinting technology. Semiconductor Science and Technology, 25(3), [035008]. https://doi.org/10.1088/0268-1242/25/3/035008