Abstract
Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 315-318 |
| Number of pages | 4 |
| Volume | 2000-January |
| ISBN (Print) | 0780357728 |
| DOIs | |
| Publication status | Published - 2000 |
| Event | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 2000 Sep 15 → 2000 Sep 22 |
Other
| Other | 28th IEEE Photovoltaic Specialists Conference, PVSC 2000 |
|---|---|
| Country | United States |
| City | Anchorage |
| Period | 00/9/15 → 00/9/22 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation. / Chun, Min Doo; Kim, Donghwan; Choo, Jaebum; Huh, Joo Youl.
Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 315-318 915825.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation
AU - Chun, Min Doo
AU - Kim, Donghwan
AU - Choo, Jaebum
AU - Huh, Joo Youl
PY - 2000
Y1 - 2000
N2 - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
AB - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
UR - http://www.scopus.com/inward/record.url?scp=84949551039&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949551039&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.915825
DO - 10.1109/PVSC.2000.915825
M3 - Conference contribution
SN - 0780357728
VL - 2000-January
SP - 315
EP - 318
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -