Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Min Doo Chun, Donghwan Kim, Jaebum Choo, Joo Youl Huh

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780357728
Publication statusPublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 2000 Sep 152000 Sep 22


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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