TY - GEN
T1 - Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation
AU - Chun, Min Doo
AU - Kim, Donghwan
AU - Choo, Jaebum
AU - Huh, Joo Youl
N1 - Publisher Copyright:
© 2000 IEEE.
PY - 2000
Y1 - 2000
N2 - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
AB - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.
UR - http://www.scopus.com/inward/record.url?scp=84949551039&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.915825
DO - 10.1109/PVSC.2000.915825
M3 - Conference contribution
AN - SCOPUS:84949551039
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 315
EP - 318
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -