Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Min Doo Chun, Donghwan Kim, Jaebum Choo, Joo Youl Huh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages315-318
Number of pages4
Volume2000-January
ISBN (Print)0780357728
DOIs
Publication statusPublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: 2000 Sep 152000 Sep 22

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period00/9/1500/9/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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  • Cite this

    Chun, M. D., Kim, D., Choo, J., & Huh, J. Y. (2000). Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 315-318). [915825] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915825