Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Min Doo Chun; Donghwan Kim; Jaebum Choo; Joo Youl Huh

doi:10.1109/PVSC.2000.915825

Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation

Min Doo Chun, Donghwan Kim, Jaebum Choo, Joo Youl Huh

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×10¹³ cm^-2 to 2×10¹⁵ cm^-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×10¹³ cm^-2 and 3×10¹³ cm^-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	315-318
Number of pages	4
Volume	2000-January
ISBN (Print)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915825
Publication status	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: 2000 Sep 15 → 2000 Sep 22

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country	United States
City	Anchorage
Period	00/9/15 → 00/9/22

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Cite this

Chun, M. D., Kim, D., Choo, J., & Huh, J. Y. (2000). Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation. In Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2000-January, pp. 315-318). [915825] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915825

Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation. / Chun, Min Doo; Kim, Donghwan; Choo, Jaebum; Huh, Joo Youl.

Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 315-318 915825.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chun, MD, Kim, D, Choo, J & Huh, JY 2000, Type conversion of boron-doped silicon wafers by 3-MeV proton irradiation. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2000-January, 915825, Institute of Electrical and Electronics Engineers Inc., pp. 315-318, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 00/9/15. https://doi.org/10.1109/PVSC.2000.915825

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abstract = "Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.",

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N2 - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

AB - Proton irradiation was conducted on Czochralski (Cz) and floating zone (Fz) boron-doped p-type Si wafers at room temperature with the doses ranging from 1×1013 cm-2 to 2×1015 cm-2. A p-n junction formed in the Cz wafers when the dose reached a value between 1.0×1013 cm-2 and 3×1013 cm-2 while a p-n-p structure formed in the Fz wafers. The formation of p-n and p-n-p structure was confirmed by the combined use of Hall measurements, current-voltage (I-V) measurements, spreading resistance (SR) measurements, and cross-sectional electron beam-induced current (EBIC) measurements.

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Access to Document

10.1109/PVSC.2000.915825