Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

Min Suk Oh, Sang Ho Kim, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

Original languageEnglish
Pages (from-to)130-137
Number of pages8
JournalSuperlattices and Microstructures
Volume39
Issue number1-4
DOIs
Publication statusPublished - 2006 Jan 1
Externally publishedYes

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Oxygen
oxygen
Ohmic contacts
Vacancies
Zinc
electric contacts
zinc
conductivity
Defects
defects
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition. / Oh, Min Suk; Kim, Sang Ho; Park, Seong Ju; Seong, Tae Yeon.

In: Superlattices and Microstructures, Vol. 39, No. 1-4, 01.01.2006, p. 130-137.

Research output: Contribution to journalArticle

Oh, Min Suk ; Kim, Sang Ho ; Park, Seong Ju ; Seong, Tae Yeon. / Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition. In: Superlattices and Microstructures. 2006 ; Vol. 39, No. 1-4. pp. 130-137.
@article{d645b692087b4b94b9c3c52075c03bac,
title = "Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition",
abstract = "We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.",
author = "Oh, {Min Suk} and Kim, {Sang Ho} and Park, {Seong Ju} and Seong, {Tae Yeon}",
year = "2006",
month = "1",
day = "1",
doi = "10.1016/j.spmi.2005.08.068",
language = "English",
volume = "39",
pages = "130--137",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "1-4",

}

TY - JOUR

T1 - Type conversion of intentionally undoped ZnO layers grown by pulsed laser deposition

AU - Oh, Min Suk

AU - Kim, Sang Ho

AU - Park, Seong Ju

AU - Seong, Tae Yeon

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

AB - We have investigated intentionally undoped p-type ZnO films grown on Si(111) substrates by pulsed-laser deposition as a function of the oxygen pressure. It is shown that the undoped ZnO films experience type conversion from n-type to p-type when the oxygen pressure changes from 7.98×10 -3 to 3.99×10-2 Pa. Ti/Au contacts give ohmic behaviour to n-type ZnO (∼1017 cm-3), but leaky Schottky behaviour to p-type ZnO (∼1018 cm-3). It is argued based on PL results that native defects, such as oxygen and zinc vacancies, could play an important role in determining the conductivity of these nominally undoped ZnO films.

UR - http://www.scopus.com/inward/record.url?scp=29344447772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29344447772&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2005.08.068

DO - 10.1016/j.spmi.2005.08.068

M3 - Article

AN - SCOPUS:29344447772

VL - 39

SP - 130

EP - 137

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1-4

ER -