Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Jamin Koo, Myeongwon Lee, Jeongmin Kang, Changjoon Yoon, Kwangeun Kim, Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

Original languageEnglish
Article number045010
JournalSemiconductor Science and Technology
Volume25
Issue number4
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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