Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

Jamin Koo, Myeongwon Lee, Jeongmin Kang, Changjoon Yoon, Kwangeun Kim, Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

Original languageEnglish
Article number045010
JournalSemiconductor Science and Technology
Volume25
Issue number4
DOIs
Publication statusPublished - 2010 Apr 21

Fingerprint

Silicon
Gold
Nanowires
nanowires
Ions
gold
silicon
ions
Gates (transistor)
Rapid thermal annealing
field effect transistors
Thin films
annealing
thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions. / Koo, Jamin; Lee, Myeongwon; Kang, Jeongmin; Yoon, Changjoon; Kim, Kwangeun; Jeon, Youngin; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 25, No. 4, 045010, 21.04.2010.

Research output: Contribution to journalArticle

Koo, Jamin ; Lee, Myeongwon ; Kang, Jeongmin ; Yoon, Changjoon ; Kim, Kwangeun ; Jeon, Youngin ; Kim, Sangsig. / Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions. In: Semiconductor Science and Technology. 2010 ; Vol. 25, No. 4.
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