We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15 ≤= x ≤ 0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the  and  directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along  allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.
|Number of pages||4|
|Journal||Physical Review Letters|
|Publication status||Published - 1995 Jul 31|
ASJC Scopus subject areas
- Physics and Astronomy(all)