Type I band alignment in Si1-xGex/Si(001) quantum wells: Photoluminescence under applied [110] and [100] uniaxial stress

D. C. Houghton, G. C. Aers, Sung Ryul Yang, E. Wang, N. L. Rowell

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15 ≤= x ≤ 0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.

Original languageEnglish
Pages (from-to)866-869
Number of pages4
JournalPhysical Review Letters
Volume75
Issue number5
Publication statusPublished - 1995 Jul 31

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tensile stress
alignment
quantum wells
photoluminescence
potential theory
conduction bands
shift
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Type I band alignment in Si1-xGex/Si(001) quantum wells : Photoluminescence under applied [110] and [100] uniaxial stress. / Houghton, D. C.; Aers, G. C.; Yang, Sung Ryul; Wang, E.; Rowell, N. L.

In: Physical Review Letters, Vol. 75, No. 5, 31.07.1995, p. 866-869.

Research output: Contribution to journalArticle

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