Type I band alignment in Si1-xGex/Si(001) quantum wells: Photoluminescence under applied [110] and [100] uniaxial stress

D. C. Houghton; G. C. Aers; S. R.Eric Yang; E. Wang; N. L. Rowell

doi:10.1103/PhysRevLett.75.866

Type I band alignment in Si1-xGex/Si(001) quantum wells: Photoluminescence under applied [110] and [100] uniaxial stress

D. C. Houghton, G. C. Aers, S. R.Eric Yang, E. Wang, N. L. Rowell

Department of Physics

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15≤x≤0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.

Original language	English
Pages (from-to)	866-869
Number of pages	4
Journal	Physical review letters
Volume	75
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.75.866
Publication status	Published - 1995

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Physics and Astronomy(all)

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10.1103/PhysRevLett.75.866

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abstract = "We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15≤x≤0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.",

author = "Houghton, {D. C.} and Aers, {G. C.} and Yang, {S. R.Eric} and E. Wang and Rowell, {N. L.}",

year = "1995",

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T1 - Type I band alignment in Si1-xGex/Si(001) quantum wells

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AU - Houghton, D. C.

AU - Aers, G. C.

AU - Yang, S. R.Eric

AU - Wang, E.

AU - Rowell, N. L.

PY - 1995

Y1 - 1995

N2 - We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15≤x≤0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.

AB - We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15≤x≤0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.

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Type I band alignment in Si1-xGex/Si(001) quantum wells: Photoluminescence under applied [110] and [100] uniaxial stress

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