Type I band alignment in Si1-xGex/Si(001) quantum wells: Photoluminescence under applied [110] and [100] uniaxial stress

D. C. Houghton, G. C. Aers, S. R.Eric Yang, E. Wang, N. L. Rowell

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15≤x≤0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions.

Original languageEnglish
Pages (from-to)866-869
Number of pages4
JournalPhysical review letters
Volume75
Issue number5
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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