Ultra-shallow p +/n junction formed by plasma ion implantation

S. Baek, C. J. Choi, Tae Yeon Seong, H. Hwang, H. K. Kim, D. W. Moon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B 2H 6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B 2H 6 plasma doping process can be completely removed by annealing at 950°C for 10s.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsA. Agarwal, L. Pelaz, H. Vuong, P. Packan, M. Kase
Volume610
Publication statusPublished - 2000
Externally publishedYes
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

Other

OtherSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II
CountryUnited States
CitySan Francisco, CA
Period00/4/2400/4/27

Fingerprint

Ion implantation
Plasmas
Sheet resistance
Doping (additives)
Annealing
Defects
Deep level transient spectroscopy
Boron
Electron microscopes
Ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Baek, S., Choi, C. J., Seong, T. Y., Hwang, H., Kim, H. K., & Moon, D. W. (2000). Ultra-shallow p +/n junction formed by plasma ion implantation In A. Agarwal, L. Pelaz, H. Vuong, P. Packan, & M. Kase (Eds.), Materials Research Society Symposium - Proceedings (Vol. 610)

Ultra-shallow p +/n junction formed by plasma ion implantation . / Baek, S.; Choi, C. J.; Seong, Tae Yeon; Hwang, H.; Kim, H. K.; Moon, D. W.

Materials Research Society Symposium - Proceedings. ed. / A. Agarwal; L. Pelaz; H. Vuong; P. Packan; M. Kase. Vol. 610 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Baek, S, Choi, CJ, Seong, TY, Hwang, H, Kim, HK & Moon, DW 2000, Ultra-shallow p +/n junction formed by plasma ion implantation in A Agarwal, L Pelaz, H Vuong, P Packan & M Kase (eds), Materials Research Society Symposium - Proceedings. vol. 610, Si Front-end Processing -Physics and Technology of Dopant-Defect Interactions II, San Francisco, CA, United States, 00/4/24.
Baek S, Choi CJ, Seong TY, Hwang H, Kim HK, Moon DW. Ultra-shallow p +/n junction formed by plasma ion implantation In Agarwal A, Pelaz L, Vuong H, Packan P, Kase M, editors, Materials Research Society Symposium - Proceedings. Vol. 610. 2000
Baek, S. ; Choi, C. J. ; Seong, Tae Yeon ; Hwang, H. ; Kim, H. K. ; Moon, D. W. / Ultra-shallow p +/n junction formed by plasma ion implantation Materials Research Society Symposium - Proceedings. editor / A. Agarwal ; L. Pelaz ; H. Vuong ; P. Packan ; M. Kase. Vol. 610 2000.
@inproceedings{644a83bd8dab4977ad12129e943fac02,
title = "Ultra-shallow p +/n junction formed by plasma ion implantation",
abstract = "We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B 2H 6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B 2H 6 plasma doping process can be completely removed by annealing at 950°C for 10s.",
author = "S. Baek and Choi, {C. J.} and Seong, {Tae Yeon} and H. Hwang and Kim, {H. K.} and Moon, {D. W.}",
year = "2000",
language = "English",
volume = "610",
editor = "A. Agarwal and L. Pelaz and H. Vuong and P. Packan and M. Kase",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Ultra-shallow p +/n junction formed by plasma ion implantation

AU - Baek, S.

AU - Choi, C. J.

AU - Seong, Tae Yeon

AU - Hwang, H.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2000

Y1 - 2000

N2 - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B 2H 6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B 2H 6 plasma doping process can be completely removed by annealing at 950°C for 10s.

AB - We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B 2H 6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B 2H 6 plasma doping process can be completely removed by annealing at 950°C for 10s.

UR - http://www.scopus.com/inward/record.url?scp=17344387385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17344387385&partnerID=8YFLogxK

M3 - Conference contribution

VL - 610

BT - Materials Research Society Symposium - Proceedings

A2 - Agarwal, A.

A2 - Pelaz, L.

A2 - Vuong, H.

A2 - Packan, P.

A2 - Kase, M.

ER -