Ultra-shallow p+/n junction formed by plasma ion implantation

S. Baek, C. J. Choi, T. Y. Seong, H. Hwang, H. K. Kim, D. W. Moon

Research output: Contribution to journalConference article

Abstract

We have investigated the electrical characteristics, junction depth and defect of ultrashallow junctions formed by using a plasma doping procedure. Compared with ultralow energy boron ion implantation at 500eV, the plasma doping process exhibits both a shallow junction depth and a low sheet resistance. The junction depths of the plasma doped samples were 15 nm and 33 nm after annealing for 10s at 900°C and 950°C, respectively. For the same junction depth, the sheet resistance of the B2H6 plasma doped sample is an order of magnitude less than that of the 500eV B ion implanted sample. Based on cross-sectional transmission electron microscope (TEM) and deep level transient spectroscopy (DLTS) analysis, the defects formed by the B2H6 plasma doping process can be completely removed by annealing at 950°C for 10s.

Original languageEnglish
Pages (from-to)B3.7.1-B3.7.6
JournalMaterials Research Society Symposium - Proceedings
Volume610
Publication statusPublished - 2000 Dec 1
EventSi Front-end Processing -Physics and Technology of Dopant-Defect Interactions II - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Baek, S., Choi, C. J., Seong, T. Y., Hwang, H., Kim, H. K., & Moon, D. W. (2000). Ultra-shallow p+/n junction formed by plasma ion implantation. Materials Research Society Symposium - Proceedings, 610, B3.7.1-B3.7.6.