Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells

Hee Dong Kim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this paper, for the first time, we report the fabrication of a resistive random access memory (ReRAM) device using Ti/NiN/Pt structure cells and its observed bipolar resistive-switching characteristics in the pulsed mode. In these experiments, NiN-based ReRAM showed excellent switching behavior under +2.4 V/3.3 ns and -2 V/3.3 ns with a high-to-low resistance ratio > 10 2. The conduction mechanisms at low and high resistance states were verified by ohmic behavior (or conducting filament) and modified space charge-limited conduction from the Mott (metal-insulator) transition, respectively. The resistive-switching process is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in NiN films. In the reliability test, the device showed an endurance of > 10 7 cycles and a retention time of > 10 5 s at 85 °C. These results show that NiN-based ReRAM can be used as a promising high-speed memory device.

Original languageEnglish
Article number6221974
Pages (from-to)2302-2307
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume59
Issue number9
DOIs
Publication statusPublished - 2012 Jun 27

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Data storage equipment
Metal insulator transition
Redox reactions
Electric space charge
Durability
Fabrication
Experiments

Keywords

  • NiN
  • resistive switching
  • space charge-limited conduction (SCLC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells. / Kim, Hee Dong; An, Ho Myoung; Kim, Tae Geun.

In: IEEE Transactions on Electron Devices, Vol. 59, No. 9, 6221974, 27.06.2012, p. 2302-2307.

Research output: Contribution to journalArticle

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